STMicroelectronics_PD85015-E
original

STMicroelectronics
PD85015-E

285-PD85015-E
PDF Datasheet
15W 13.6V 870MHz LDMOS in powerSO-10RF plastic package

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Tech Specifications

Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
870MHz
Gain
16dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
Max Operating Temperature
165°C
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PD85015-E Description

PD85015-E Description

The PD85015-E from STMicroelectronics is an LDMOS-based RF MOSFET designed for high-performance RF power amplification applications. Operating at 870 MHz with a rated voltage of 40 V and a current rating of 5 A, this device delivers 15 W of power output, making it suitable for demanding RF systems. Tested at 13.6 V and 150 mA, it ensures reliable performance under specified conditions. The 16 dB gain enhances signal amplification efficiency, while its PWRSO-10RF package ensures robust thermal and electrical performance. Although marked as Obsolete, it remains a viable choice for legacy designs requiring high-frequency LDMOS technology.

PD85015-E Features

  • LDMOS Technology: Offers superior linearity, efficiency, and thermal stability compared to traditional MOSFETs.
  • High Power Output: 15 W capability at 870 MHz, ideal for RF power stages.
  • 16 dB Gain: Enhances signal strength with minimal noise interference.
  • Robust Packaging: PWRSO-10RF ensures durability and efficient heat dissipation.
  • Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.
  • Wide Voltage Range: Operates up to 40 V, providing flexibility in power supply design.

PD85015-E Applications

  • Base Station Amplifiers: Suitable for 870 MHz cellular infrastructure due to high gain and power efficiency.
  • RF Transmitters: Ideal for broadcast and communication systems requiring stable LDMOS performance.
  • Military & Aerospace: Reliable operation in harsh environments, leveraging its robust packaging.
  • Industrial RF Systems: Used in high-power RF applications like radar and telemetry.

Conclusion of PD85015-E

The PD85015-E is a high-performance LDMOS RF MOSFET tailored for RF power amplification in critical applications. Its 15 W output, 16 dB gain, and 870 MHz operation make it a strong candidate for legacy designs in telecom, broadcasting, and industrial systems. While obsolete, its PWRSO-10RF packaging and ROHS3 compliance ensure it remains a dependable choice for engineers seeking proven LDMOS technology.

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