STMicroelectronics_PD85035STR1-E
original

STMicroelectronics
PD85035STR1-E

285-PD85035STR1-E
RF MOSFET Transistors RF Power Transistor LdmoST N-ch Plastic

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
Original
D&B

Tech Specifications

Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
870MHz
Gain
17dB
Gate to Source Voltage (Vgs)
15V
Max Operating Temperature
150°C
Max Power Dissipation
95W
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PD85035STR1-E Description

RF Mosfet 13.6 V 350 mA 870MHz 17dB 15W PowerSO-10RF (Straight Lead)

FAQ

What voltage specification is listed for PD85035STR1-E?
The listed voltage-related specification for PD85035STR1-E is 40V.
What is PD85035STR1-E?
What operating temperature range does PD85035STR1-E support?
Are there related or alternative parts for PD85035STR1-E?
What package or case is PD85035STR1-E available in?
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