STMicroelectronics_PD85035S-E
original

STMicroelectronics
PD85035S-E

285-PD85035S-E
PDF Datasheet
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
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Tech Specifications

Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
40V
Drain to Source Voltage (Vdss)
40V
Frequency
870MHz
Gain
17dB
Gate to Source Voltage (Vgs)
15V
Max Frequency
1GHz
Max Operating Temperature
150°C
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PD85035S-E Description

PD85035S-E Description

The PD85035S-E from STMicroelectronics is a high-performance RF LDMOS MOSFET designed for demanding RF power amplification applications. Operating at 870MHz with a rated voltage of 40V and a current rating of 8A, this device delivers 15W output power at 13.6V test voltage, making it ideal for robust RF systems. Its 17dB gain ensures efficient signal amplification, while the LDMOS technology provides superior thermal stability and linearity. Packaged in a PWRSO-10RF tube, the PD85035S-E meets ROHS3 compliance and REACH unaffected standards, ensuring environmental and regulatory adherence. With an MSL 3 (168 hours) rating, it balances performance with reliability in moisture-sensitive environments.

PD85035S-E Features

  • High Power Output: 15W at 13.6V, optimized for RF amplification.
  • LDMOS Technology: Enhances thermal efficiency and linearity, reducing distortion.
  • High Gain: 17dB ensures minimal signal loss in amplification stages.
  • Broad Voltage Range: Operates up to 40V, accommodating diverse power supply designs.
  • Robust Packaging: PWRSO-10RF tube ensures mechanical durability and heat dissipation.
  • Compliance: ROHS3 and REACH unaffected, meeting global environmental standards.
  • Frequency Optimized: 870MHz operation suits critical RF communication bands.

PD85035S-E Applications

  • Base Station Amplifiers: Ideal for cellular infrastructure due to high gain and power efficiency.
  • Two-Way Radios: Enhances signal clarity and range in public safety and commercial systems.
  • RF Transmitters: Suitable for broadcast and telecommunication equipment requiring stable output.
  • Military & Aerospace: Reliable performance in harsh environments with stringent thermal demands.
  • ISM Band Devices: Supports industrial, scientific, and medical applications at 870MHz.

Conclusion of PD85035S-E

The PD85035S-E stands out as a high-reliability RF LDMOS MOSFET for power amplification, combining 15W output, 17dB gain, and LDMOS efficiency in a compact package. Its compliance with environmental standards and moisture-resistant design make it a preferred choice for telecom, broadcast, and industrial RF systems. Engineers benefit from its balance of performance, durability, and regulatory adherence, ensuring long-term operational stability in critical applications.

FAQ

What operating temperature range does PD85035S-E support?
PD85035S-E has an operating temperature range of 150°C.
What package or case is PD85035S-E available in?
Is PD85035S-E currently in stock?
What is PD85035S-E?
What is the mounting type of PD85035S-E?
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