STMicroelectronics_PD85035-E
original

STMicroelectronics
PD85035-E

285-PD85035-E
PDF Datasheet
35W 13.6V 870MHz LDMOS in PowerSO-10RF plastic package
23 weeks

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Tech Specifications

Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
40V
DS Breakdown Voltage-Min
40V
Frequency
870MHz
Gain
17dB
Gate to Source Voltage (Vgs)
15V
Lead Free
Lead Free
Max Frequency
1GHz
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PD85035-E Description

PD85035-E Description

The PD85035-E from STMicroelectronics is a high-performance RF MOSFET based on LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, designed for demanding RF power amplification applications. Operating at 870 MHz with a rated voltage of 40 V and a current rating of 8 A, this component delivers 15 W of output power with an impressive 17 dB gain, making it ideal for high-efficiency RF systems. Tested at 13.6 V and 350 mA, it ensures reliable performance under specified conditions. Packaged in a PWRSO-10RF tube, the PD85035-E is ROHS3 Compliant and REACH Unaffected, meeting stringent environmental and regulatory standards.

PD85035-E Features

  • High Power Output: Delivers 15 W at 870 MHz, suitable for robust RF amplification.
  • Exceptional Gain: 17 dB gain enhances signal strength with minimal noise.
  • LDMOS Technology: Ensures high efficiency, thermal stability, and linearity.
  • Wide Voltage Range: Rated for 40 V, accommodating versatile designs.
  • Reliable Packaging: PWRSO-10RF tube ensures mechanical and thermal durability.
  • Compliance: ROHS3 Compliant, EAR99, and REACH Unaffected for global deployment.
  • Moisture Sensitivity Level (MSL) 3: Suitable for industrial environments with controlled handling.

PD85035-E Applications

The PD85035-E excels in applications requiring high-frequency, high-power RF amplification, including:

  • Base Station Amplifiers: Enhances signal transmission in cellular infrastructure.
  • Two-Way Radios: Delivers clear, long-range communication for public safety and military systems.
  • Broadcast Equipment: Ensures stable, high-fidelity signal broadcasting.
  • Industrial RF Systems: Ideal for RF heating, plasma generation, and medical diathermy.
  • Avionics & Defense: Reliable performance in mission-critical communication systems.

Conclusion of PD85035-E

The PD85035-E stands out as a superior RF LDMOS MOSFET, combining high power output, exceptional gain, and robust LDMOS technology for demanding RF applications. Its compliance with environmental standards and versatile packaging makes it a preferred choice for telecommunications, industrial, and defense sectors. Engineers seeking reliability, efficiency, and performance in RF power amplification will find the PD85035-E an optimal solution.

FAQ

What operating temperature range does PD85035-E support?
PD85035-E has an operating temperature range of 165°C.
Are there related or alternative parts for PD85035-E?
What is PD85035-E?
Is PD85035-E currently in stock?
What is the mounting type of PD85035-E?
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