Diodes Incorporated_DMT6008LFG-7
original

Diodes Incorporated
DMT6008LFG-7

278-DMT6008LFG-7
PDF Datasheet
MOSFET N-CH 60V 13A PWRDI3333
12 Weeks

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ISO45001
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Tech Specifications

Configuration
Single Quad Drain Triple Source
Typical Turn-Off Delay Time (ns)
24.4
Maximum Gate Source Leakage Current (nA)
10000
Input Capacitance (Ciss) (Max) @ Vds
2713 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
50.4 nC @ 10 V
Typical Rise Time (ns)
4.4
PPAP
No
Channel Mode
Enhancement
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DMT6008LFG-7 Description

DMT6008LFG-7 Description

The DMT6008LFG-7 is a high-performance MOSFET N-CH 60V 13A PWRDI3333 device manufactured by Diodes Incorporated. This single FET is designed to deliver exceptional performance and reliability in various electronic applications. With its advanced technology and unique features, the DMT6008LFG-7 stands out among similar models in the market.

DMT6008LFG-7 Features

  • Input Capacitance (Ciss) (Max) @ Vds: 2713 pF @ 30 V
  • Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 10 V
  • Drain to Source Voltage (Vdss): 60 V
  • Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
  • Technology: MOSFET (Metal Oxide)
  • Vgs (Max): ±12V
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Base Product Number: DMT6008

The DMT6008LFG-7 offers several advantages over similar models, including lower input capacitance, higher drain-source voltage, and improved power dissipation capabilities. Its advanced MOSFET technology ensures efficient operation and minimal power loss, making it an ideal choice for high-power applications.

DMT6008LFG-7 Applications

The DMT6008LFG-7 is well-suited for a variety of applications where high power and performance are critical. Some specific use cases include:

  1. Power Management Systems: Due to its high current and voltage ratings, the DMT6008LFG-7 is ideal for managing power in various electronic devices.
  2. Automotive Electronics: The device's robustness and reliability make it suitable for automotive applications, such as electric vehicle charging systems and powertrain controls.
  3. Industrial Controls: The DMT6008LFG-7 can be used in industrial control systems, where high power and precision are required.
  4. Renewable Energy Systems: The device's high power dissipation capabilities make it suitable for solar panel inverters and other renewable energy applications.

Conclusion of DMT6008LFG-7

In conclusion, the DMT6008LFG-7 is a high-performance MOSFET N-CH device that offers exceptional technical specifications and performance benefits. Its unique features and advantages make it an ideal choice for various high-power applications, including power management systems, automotive electronics, industrial controls, and renewable energy systems. With its advanced technology and commitment to quality, the DMT6008LFG-7 is a reliable and efficient solution for demanding electronic applications.

FAQ

What package or case is DMT6008LFG-7 available in?
DMT6008LFG-7 is available in the 8-PowerVDFN package / case.
What voltage specification is listed for DMT6008LFG-7?
Is DMT6008LFG-7 currently in stock?
Are there related or alternative parts for DMT6008LFG-7?
What operating temperature range does DMT6008LFG-7 support?
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