onsemi_BC807-16LT1G

onsemi
BC807-16LT1G  
Single Bipolar Transistors

onsemi
BC807-16LT1G
276-BC807-16LT1G
Ersa
onsemi-BC807-16LT1G-datasheets-13233136.pdf
TRANS PNP 45V 0.5A SOT23-3
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    ISO9001
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    ISO45001
    ISO14001

    BC807-16LT1G Description

    BC807-16LT1G Description

    The BC807-16LT1G is a PNP bipolar junction transistor (BJT) manufactured by onsemi, designed for high-frequency applications. It features a surface-mount packaging, making it ideal for use in compact electronic devices. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA, this device is suitable for a wide range of power and signal amplification applications.

    BC807-16LT1G Features

    • PNP Transistor Type: This device is a PNP transistor, which is commonly used in applications requiring high-frequency amplification and switching.
    • 100MHz Frequency - Transition: The BC807-16LT1G has a high transition frequency of 100MHz, making it suitable for high-speed digital and analog applications.
    • 500mA Current - Collector (Ic) (Max): This device can handle a maximum collector current of 500mA, providing ample current gain for various applications.
    • 700mV Vce Saturation (Max) @ Ib, Ic: The BC807-16LT1G offers low saturation voltage, which is beneficial for power efficiency in switching applications.
    • 300 mW Power - Max: This device can handle a maximum power dissipation of 300mW, ensuring reliable operation in various power applications.
    • 100 @ 100mA, 1V DC Current Gain (hFE) (Min): The BC807-16LT1G provides a minimum current gain of 100, ensuring consistent performance in amplification applications.

    BC807-16LT1G Applications

    The BC807-16LT1G is ideal for a variety of applications, including:

    1. Amplification: Due to its high-frequency capabilities and high current gain, this device is suitable for use in audio and radio frequency (RF) amplifiers.
    2. Switching: The low saturation voltage and high current handling capabilities make it an excellent choice for power switching applications.
    3. Signal Processing: The BC807-16LT1G's high transition frequency and low noise characteristics make it suitable for use in signal processing circuits, such as filters and mixers.

    Conclusion of BC807-16LT1G

    The BC807-16LT1G is a versatile PNP bipolar junction transistor that offers a combination of high-frequency performance, high current handling capabilities, and low saturation voltage. Its surface-mount packaging makes it ideal for use in compact electronic devices, while its unique features and advantages over similar models make it a popular choice for a wide range of applications, including amplification, switching, and signal processing.

    Tech Specifications

    Configuration
    PPAP
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    Maximum Collector Cut-Off Current (nA)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Mounting Style
    Unit Weight
    Transistor Polarity
    Continuous Collector Current
    RoHS
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Maximum DC Collector Current
    Length
    Technology
    Gain Bandwidth Product fT
    Collector-Emitter Saturation Voltage
    Collector- Emitter Voltage VCEO Max
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    Pd - Power Dissipation
    USHTS
    Width

    BC807-16LT1G Documents

    Download datasheets and manufacturer documentation for BC807-16LT1G

    Ersa Wafer Source Addition 26/Nov/2014      
    Ersa BC807-(16,25,40)L      
    Ersa BC807-(16,25,40)L      
    Ersa Glue Mount Process 11/July/2008       SOT23 16/Sep/2016      
    Ersa onsemi RoHS       Material Declaration BC807-16LT1G      

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