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DMT69M8LFV-7

DMT69M8LFV-7 Description

The DMT69M8LFV-7 is a high-performance MOSFET (Metal Oxide) from Diodes Incorporated, designed for use in automotive applications. This N-Channel MOSFET features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 45A at 25°C. With a maximum power dissipation of 42W at case temperature (Tc), this device is well-suited for high-power applications.

DMT69M8LFV-7 Features

• Technical Specifications:

  • Input Capacitance (Ciss): 1925 pF @ 30V
  • Gate Charge (Qg): 33.5 nC @ 10V
  • Vgs (Max): ±16V
  • Rds On (Max): 9.5mOhm @ 13.5A, 10V
  • Vgs(th) (Max): 3V @ 250µA
  • Drive Voltage: 4.5V (Max Rds On), 10V (Min Rds On)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • RoHS Status: ROHS3 Compliant
  • REACH Status: REACH Unaffected
  • Grade: Automotive
  • Mounting Type: Surface Mount
  • Package: Tape & Reel (TR)
  • Base Product Number: DMT69

• Unique Features and Advantages:

  • Low Rds On (9.5mOhm) for high efficiency and low power loss
  • High Vdss (60V) for compatibility with various voltage sources
  • Automotive-grade device, suitable for harsh environments
  • Surface-mount package for space-saving designs

DMT69M8LFV-7 Applications

The DMT69M8LFV-7 is ideal for a variety of high-power applications in the automotive industry, including:

• Electric vehicle (EV) charging systems
• In-vehicle power supplies
• Motor control circuits
• Power management systems
• Battery management systems

Conclusion of DMT69M8LFV-7

The DMT69M8LFV-7 from Diodes Incorporated is a powerful, automotive-grade MOSFET designed for high-power applications. With its low Rds On, high Vdss, and robust performance, this device is an excellent choice for demanding automotive applications. Its unique features and advantages make it a top choice for engineers looking to optimize power efficiency and reliability in their designs.