Diodes Incorporated_DNBT8105-7
original

Diodes Incorporated
DNBT8105-7

276-DNBT8105-7
PDF Datasheet
TRANS NPN 60V 1A SOT23-3
8 Weeks

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Tech Specifications

Configuration
Single
PPAP
No
Maximum Base Emitter Saturation Voltage (V)
1.1@100mA@1A
Product Status
Active
Voltage - Collector Emitter Breakdown (Max)
60 V
Automotive
No
Supplier Package
SOT-23
Transistor Type
NPN
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DNBT8105-7 Description

DNBT8105-7 Description

The DNBT8105-7 is a high-performance NPN bipolar transistor designed and manufactured by Diodes Incorporated. This device is part of the Single Bipolar Transistors category and offers a range of technical specifications that make it suitable for various applications. With a maximum collector-emitter breakdown voltage of 60V, a maximum collector current of 1A, and a maximum power dissipation of 600mW, the DNBT8105-7 is designed to deliver reliable performance in demanding electronic systems.

DNBT8105-7 Features

  • 150MHz Transition Frequency: The DNBT8105-7 boasts a high transition frequency of 150MHz, making it suitable for high-speed switching applications.
  • 1A Collector Current: With a maximum collector current of 1A, this transistor can handle significant current loads, making it ideal for power amplification and switching applications.
  • Low Vce Saturation: The DNBT8105-7 has a low Vce saturation voltage of 500mV at 100mA and 1A, ensuring efficient operation and low power dissipation.
  • Surface Mount Technology: The device is designed for surface mount applications, making it suitable for use in compact and densely populated electronic circuits.
  • Active Product Status: As an active product, the DNBT8105-7 is readily available and supported by Diodes Incorporated, ensuring ongoing availability and support.
  • RoHS3 Compliance: The DNBT8105-7 is compliant with RoHS3 regulations, making it suitable for use in environmentally conscious applications.

DNBT8105-7 Applications

The DNBT8105-7's unique combination of high transition frequency, low Vce saturation, and high current handling capabilities make it ideal for a variety of applications, including:

  • Power Amplification: Due to its high current handling capabilities and low Vce saturation, the DNBT8105-7 is well-suited for power amplification applications in audio and communication systems.
  • High-Speed Switching: The device's 150MHz transition frequency makes it an excellent choice for high-speed switching applications, such as in digital circuits and power management systems.
  • Automotive Electronics: The DNBT8105-7's robust performance and reliability make it suitable for use in automotive electronics, such as engine control modules and infotainment systems.

Conclusion of DNBT8105-7

In conclusion, the DNBT8105-7 is a versatile and high-performance NPN bipolar transistor that offers a range of technical specifications and features that make it suitable for a variety of applications. Its high transition frequency, low Vce saturation, and high current handling capabilities, combined with its RoHS3 compliance and active product status, make it an excellent choice for engineers looking to design reliable and efficient electronic systems.

FAQ

What is DNBT8105-7?
DNBT8105-7 is a Single Bipolar Transistors from Diodes Incorporated. This product page provides its main specifications, pricing information, availability, and inquiry options.
What operating temperature range does DNBT8105-7 support?
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Availability (In Stock : 943 )
Quantity Unit Price Ext. Price
5+ $0.08760 $0.44
50+ $0.06949 $3.47
150+ $0.06044 $9.07
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