onsemi_MUN5114DW1T1G
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onsemi
MUN5114DW1T1G

293-MUN5114DW1T1G
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Trans Digital BJT PNP 50V 100mA 385mW 6-Pin SC-88 T/R
10 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Emitter Breakdown Voltage
50V
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
250mV
Continuous Collector Current
-100mA
Current Rating
-100mA
Halogen Free
Halogen Free
hFE Min
80
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MUN5114DW1T1G Description

MUN5114DW1T1G Description

The MUN5114DW1T1G is a Bipolar Transistor Array from onsemi, designed for pre-biased applications. This device offers a combination of high performance and reliability, making it ideal for various electronic systems. With a maximum collector current of 100mA and a low saturation voltage of 250mV at 10mA, the MUN5114DW1T1G provides efficient power management in your designs.

MUN5114DW1T1G Features

  • Technical Specifications:

    • Maximum Collector Current (Ic): 100mA
    • Base Resistor (R1): 10kOhms
    • Emitter-Base Resistor (R2): 47kOhms
    • Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
    • Voltage - Collector Emitter Breakdown (Max): 50V
    • Maximum Power: 250mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
    • Maximum Collector Cutoff Current: 500nA
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface Mount technology for compact design and ease of integration
    • Active product status for ongoing availability and support
    • REACH Unaffected and ROHS3 Compliant for environmental and regulatory compliance
  • Unique Advantages:

    • Pre-biased design simplifies circuit design and reduces external components
    • Low saturation voltage for improved efficiency in power management applications

MUN5114DW1T1G Applications

The MUN5114DW1T1G is ideal for a variety of applications where efficient power management and reliable performance are crucial. Some specific use cases include:

  • Automotive Electronics: For power management and control systems in vehicles, where reliability and efficiency are paramount.
  • Industrial Control Systems: In applications requiring precise control and monitoring of power consumption.
  • Telecommunications: For signal processing and power management in communication equipment, ensuring consistent performance and reliability.

Conclusion of MUN5114DW1T1G

The MUN5114DW1T1G from onsemi is a high-performance Bipolar Transistor Array designed for pre-biased applications. Its unique combination of technical specifications, performance benefits, and unique advantages make it an ideal choice for various electronic systems, particularly in automotive, industrial, and telecommunications applications. With its ongoing availability, environmental compliance, and reliable performance, the MUN5114DW1T1G is a trusted solution for your design needs.

FAQ

What is MUN5114DW1T1G?
MUN5114DW1T1G is a Bipolar Transistor Arrays, Pre-Biased from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
Is MUN5114DW1T1G currently in stock?
What voltage specification is listed for MUN5114DW1T1G?
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Availability (In Stock : 34 )
Quantity Unit Price Ext. Price
5+ $0.05551 $0.28
50+ $0.05432 $2.72
150+ $0.05353 $8.03
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