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DRDNB16W-7

DRDNB16W-7 Description

The DRDNB16W-7 is a pre-biased NPN bipolar transistor offered by Diodes Incorporated. This single device is designed to provide high performance in a compact SOT363 package. With a maximum collector-emitter breakdown voltage of 50V, it is suitable for various applications requiring high voltage and current handling capabilities. The device is also RoHS3 compliant, making it an environmentally friendly choice for electronic designs.

DRDNB16W-7 Features

• Frequency - Transition: 200 MHz
• Current - Collector (Ic) (Max): 600 mA
• Resistor - Base (R1): 1 kOhms
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• ECCN: EAR99
• Mounting Type: Surface Mount
• Product Status: Active
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Power - Max: 200 mW
• REACH Status: REACH Unaffected
• Manufacturer: Diodes Incorporated
• Resistor - Emitter Base (R2): 10 kOhms
• Current - Collector Cutoff (Max): 500nA
• HTSUS: 8541.21.0075
• Package: Tape & Reel (TR)
• RoHS Status: ROHS3 Compliant
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
• Base Product Number: DRDNB16
• Moisture Sensitivity Level (MSL): 1 (Unlimited)

DRDNB16W-7 Applications

The DRDNB16W-7 is ideal for applications requiring high voltage and current handling capabilities in a compact form factor. Some specific use cases include:

1. Power management circuits
2. Motor control applications
3. Audio amplifiers
4. Switching regulators
5. High-voltage signal processing circuits

Conclusion of DRDNB16W-7

The DRDNB16W-7 is a high-performance, pre-biased NPN bipolar transistor that offers excellent voltage and current handling capabilities in a compact SOT363 package. Its unique features, such as a high transition frequency of 200 MHz and a maximum collector current of 600 mA, make it an ideal choice for various high-voltage and high-current applications. With its RoHS3 compliance and moisture sensitivity level of 1, the DRDNB16W-7 is also an environmentally friendly and reliable option for electronic designs.