onsemi

FQB19N20CTM

FQB19N20CTM Description

The FQB19N20CTM is a high-performance MOSFET (Metal Oxide) from onsemi, designed for applications requiring robust power handling and efficient switching. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 19A at 25°C, this N-channel device is well-suited for various power electronics applications. The device is obsolete, indicating that it may no longer be in production, but it remains a reliable choice for existing designs.

FQB19N20CTM Features

• High Input Capacitance (Ciss): The FQB19N20CTM boasts a maximum input capacitance of 1080 pF at 25V, ensuring fast switching speeds and low power consumption.

• Low Gate Charge (Qg): With a maximum gate charge of 53 nC at 10V, this MOSFET minimizes switching losses, contributing to improved efficiency in power electronic systems.

• Robust Power Dissipation: Capable of handling a maximum power dissipation of 3.13W at ambient temperature and 139W at case temperature, the FQB19N20CTM is designed for demanding power applications.

• Surface Mount Technology: The device's surface mount packaging allows for compact and efficient integration into printed circuit boards (PCBs), reducing space requirements and enhancing thermal performance.

• Compliance and Standards: The FQB19N20CTM is compliant with the ROHS3 standard, indicating its suitability for environmentally conscious designs. Additionally, it is classified as REACH unaffected and has an ECCN of EAR99, facilitating international trade and distribution.

FQB19N20CTM Applications

The FQB19N20CTM is ideal for applications where high voltage, current handling, and efficient power management are critical. Some specific use cases include:

• Power Supplies: The device's high voltage and current ratings make it suitable for power supply designs, particularly in industrial and automotive applications.

• Motor Controls: The FQB19N20CTM can be used in motor control circuits, providing efficient switching and power management for electric motors in various applications.

• Industrial Automation: In industrial automation systems, the MOSFET's robust performance and compliance with international standards make it a reliable choice for controlling high-power devices.

Conclusion of FQB19N20CTM

While the FQB19N20CTM is now considered obsolete, its high-performance characteristics, including high input capacitance, low gate charge, and robust power dissipation, make it a valuable component for existing designs in power electronics. Its compliance with environmental standards and international trade regulations further enhances its appeal for applications requiring high voltage and current handling. Despite its obsolescence, the FQB19N20CTM remains a reliable choice for applications where performance and efficiency are paramount.