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FQD4P25TM-WS

The FQD4P25TM-WS is a high voltage N-channel MOSFET from ON Semiconductor. It is designed for high voltage applications and offers excellent performance in terms of switching speed and efficiency.

Description:

The FQD4P25TM-WS is a high voltage N-channel MOSFET that features a drain-source voltage (VDS) of -25V and a continuous drain current (ID) of 4A. It is available in a TO-220 package, which is suitable for a wide range of applications.

Features:

• High voltage operation: The FQD4P25TM-WS is designed to operate at high voltages, making it suitable for applications that require high voltage switching.
• Low on-state resistance (RDS(on)): The FQD4P25TM-WS has a low on-state resistance, which helps to minimize power dissipation and improve efficiency.
• Fast switching speed: The FQD4P25TM-WS has a fast switching speed, which makes it suitable for applications that require high frequency operation.
• High input impedance: The FQD4P25TM-WS has a high input impedance, which makes it easy to drive with a low voltage control signal.

Applications:

The FQD4P25TM-WS is suitable for a wide range of applications, including:

• Power switching in motor control applications
• Switching regulator circuits
• High voltage DC-DC converters
• Inverter circuits
• Class D audio amplifiers
• Battery protection circuits

In summary, the FQD4P25TM-WS is a high voltage N-channel MOSFET that offers excellent performance in terms of switching speed and efficiency. It is suitable for a wide range of applications that require high voltage switching and is available in a TO-220 package for easy integration into various designs.