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FQA11N90C  

Single FETs, MOSFETs

The FQA11N90C is a high voltage N-channel MOSFET manufactured by ON Semiconductor. It is designed for use in a variety of power electronic applications, including motor control, power supplies, and energy management systems.

Description:

The FQA11N90C is a high voltage N-channel MOSFET with a maximum drain-source voltage (VDS) of 900V. It has a continuous drain current (ID) of 11A and a low on-state resistance (RDS(on)) of 0.55 ohms maximum at a gate-source voltage (VGS) of 10V. The device also features a fast switching speed and low gate charge, making it suitable for high efficiency applications.

Features:

• High voltage operation up to 900V
• Continuous drain current of 11A
• Low on-state resistance (RDS(on)) of 0.55 ohms maximum at VGS = 10V
• Fast switching speed and low gate charge for high efficiency
• Suitable for use in power electronic applications

Applications:

• Motor control
• Power supplies
• Energy management systems
• Industrial control
• Automotive applications

Overall, the FQA11N90C is a high performance MOSFET that offers excellent electrical characteristics and is suitable for a wide range of power electronic applications. Its high voltage operation and low on-state resistance make it an ideal choice for applications that require efficient power management and control.

FQA11N90C Documents

Download datasheets and manufacturer documentation for FQA11N90C

Datasheets :

FQA11N90C      

HTML Datasheet :

FQA11N90C      

Environmental Information :

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