


onsemi
FQPF2N80YDTU
278-FQPF2N80YDTU
PDF Datasheet
800V 1.5A N-CH MOSFET, 6.3Ω Rds(on), TO-220
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Responsible qualityTech Specifications
Package/Case
TO-220-3
Continuous Drain Current (ID)
1.5A
Drain to Source Resistance
4.9R
Drain to Source Voltage (Vdss)
800V
Element Configuration
Single
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Height
16.07mm
FQPF2N80YDTU Description
N-Channel 800 V 1.5A (Tc) 35W (Tc) Through Hole TO-220F-3 (Y-Forming)
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