The DXT2014P5-13 is a high-performance PNP single bipolar transistor offered by Diodes Incorporated. This device is designed to deliver exceptional performance in power management applications, thanks to its robust technical specifications and advanced features. With a maximum collector current of 4A and a collector-emitter breakdown voltage of 140V, the DXT2014P5-13 is well-suited for demanding power electronics applications.
DXT2014P5-13 Features
High Power Handling: The DXT2014P5-13 can handle up to 3.2W of power, making it ideal for high-power applications.
Low Saturation Voltage: With a Vce saturation voltage of just 360mV at 3A, this transistor offers high efficiency in power switching applications.
High Current Gain: A minimum DC current gain (hFE) of 100 at 1A and 5V ensures reliable operation in various circuits.
Surface Mount Package: The PowerDI™ 5 package allows for easy integration into surface mount applications, improving manufacturing efficiency.
Compliance: The DXT2014P5-13 is compliant with RoHS3 standards, making it suitable for environmentally conscious designs.
Low Leakage Current: A maximum collector cutoff current of 20nA (ICBO) ensures minimal power loss in standby modes.
DXT2014P5-13 Applications
The DXT2014P5-13 is ideal for a variety of applications where high power and reliability are critical:
Power Amplifiers: Its high current and power ratings make it suitable for use in power amplifiers in audio and communication systems.
Switching Regulators: The low saturation voltage and high current gain make it an excellent choice for switching regulators in power supply designs.
Motor Control: Its robust performance characteristics make it suitable for motor control applications in industrial and automotive systems.
Conclusion of DXT2014P5-13
The DXT2014P5-13 stands out in the market due to its combination of high power handling, low saturation voltage, and compliance with environmental standards. Its unique features make it a preferred choice for designers looking to optimize power efficiency and reliability in their electronic devices. With its robust performance and versatility, the DXT2014P5-13 is a valuable component for a wide range of high-power electronic applications.
Tech Specifications
Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Mounting Style
Unit Weight
Transistor Polarity
Continuous Collector Current
RoHS
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Maximum DC Collector Current
Technology
Gain Bandwidth Product fT
Collector-Emitter Saturation Voltage
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Pd - Power Dissipation
USHTS
DXT2014P5-13 Documents
Download datasheets and manufacturer documentation for DXT2014P5-13
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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