onsemi
BD136G  
Single Bipolar Transistors

onsemi
BD136G
276-BD136G
Ersa
onsemi-BD136G-datasheets-3270691.pdf
TRANS PNP 45V 1.5A TO126
In Stock : 1863

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BD136G Description

BD136G Description

The BD136G is a PNP transistor designed for a wide range of applications in the electronics industry. Manufactured by onsemi, this single bipolar transistor boasts a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 45 V. With a maximum power rating of 1.25 W, the BD136G is suitable for various high-power applications. The device is mounted through hole and is available in a bulk package, making it easy to integrate into various electronic systems.

BD136G Features

  • High Current and Voltage Ratings: The BD136G can handle a maximum collector current of 1.5 A and a collector-emitter breakdown voltage of 45 V, making it suitable for high-power applications.
  • Low Saturation Voltage: The BD136G has a low saturation voltage of 500 mV at 50 mA and 500 mA, ensuring efficient operation in low-voltage circuits.
  • High DC Current Gain: With a minimum DC current gain (hFE) of 40 at 150 mA and 2 V, the BD136G offers excellent amplification capabilities.
  • RoHS Compliance: The BD136G is compliant with the RoHS3 directive, making it an environmentally friendly choice for electronic designs.
  • Active Product Status: As an active product, the BD136G is readily available and supported by onsemi, ensuring long-term availability and support.

BD136G Applications

The BD136G's unique combination of high current and voltage ratings, low saturation voltage, and high DC current gain make it ideal for a variety of applications, including:

  1. Power Amplifiers: The BD136G's high current and voltage ratings make it suitable for use in power amplifiers, where high power and low distortion are required.
  2. Switching Applications: The low saturation voltage of the BD136G makes it an excellent choice for switching applications, where efficient operation is critical.
  3. Automotive Electronics: The BD136G's high power rating and robustness make it suitable for use in automotive electronics, such as engine control modules and power management systems.
  4. Industrial Control Systems: The BD136G's ability to handle high currents and voltages makes it ideal for use in industrial control systems, where reliability and performance are paramount.

Conclusion of BD136G

The BD136G is a versatile and high-performance PNP transistor that offers a unique combination of features, making it an ideal choice for a wide range of applications in the electronics industry. Its high current and voltage ratings, low saturation voltage, and high DC current gain, combined with its RoHS compliance and active product status, make the BD136G a reliable and environmentally friendly option for designers looking to create high-performance electronic systems.

Tech Specifications

Configuration
PPAP
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
SVHC
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Base Current (A)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Tab
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

BD136G Documents

Download datasheets and manufacturer documentation for BD136G

Ersa Assembly Change 28/Dec/2020      
Ersa BD136,138,140      
Ersa BD136,138,140      
Ersa onsemi RoHS       onsemi REACH       Material Declaration BD136G      

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