

Vishay / Siliconix
SI8800EDB-T2-E1
Why Choose Us?
Professional Platform
B2B & B2C purchasingDelivery at full speed
1-2 days deliveryWide variety
Original manufacturers365 days guarantee
Responsible qualityTech Specifications
SI8800EDB-T2-E1 Description
The SI8800EDB-T2-E1 is a high voltage, high-speed MOSFET driver from Vishay / Siliconix. It is designed to drive N-channel MOSFETs in power conversion applications such as motor control, power supplies, and Class D audio amplifiers.
Description:
The SI8800EDB-T2-E1 is a monolithic integrated circuit in a compact SO8 package. It features high voltage capability, fast switching speed, and low on-resistance. The device includes built-in protection features such as overcurrent, overtemperature, and undervoltage lockout.
Features:
- High voltage capability: The SI8800EDB-T2-E1 can handle supply voltages up to 40V, making it suitable for high voltage applications.
- Fast switching speed: The device features fast switching speeds, with a propagation delay of only 45ns.
- Low on-resistance: The on-resistance of the SI8800EDB-T2-E1 is low, which helps to minimize power losses in the application.
- Built-in protection features: The device includes overcurrent, overtemperature, and undervoltage lockout protection to ensure safe and reliable operation.
- Small package: The SO8 package is compact and easy to integrate into a variety of applications.
Applications:
The SI8800EDB-T2-E1 is suitable for a wide range of power conversion applications, including:
- Motor control
- Power supplies
- Class D audio amplifiers
- Battery management systems
- LED lighting
- Solar power systems
Overall, the SI8800EDB-T2-E1 is a versatile MOSFET driver that offers high performance and reliability in a compact package. Its high voltage capability, fast switching speed, and built-in protection features make it a popular choice for a variety of power conversion applications.



.png)









.png?x-oss-process=image/format,webp/resize,h_32)










