Diodes Incorporated_ZXMN10B08E6TA
original

Diodes Incorporated
ZXMN10B08E6TA

278-ZXMN10B08E6TA
PDF Datasheet
MOSFET N-CH 100V 1.6A SOT26
8 Weeks

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Tech Specifications

Configuration
Single Quad Drain
Typical Turn-Off Delay Time (ns)
12.1
Input Capacitance (Ciss) (Max) @ Vds
497 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
9.2 nC @ 10 V
Typical Rise Time (ns)
2.1
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
2.9
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ZXMN10B08E6TA Description

ZXMN10B08E6TA Description

The ZXMN10B08E6TA is a high-performance N-Channel MOSFET from Diodes Incorporated, designed for applications requiring low on-resistance and high efficiency. With a drain-to-source voltage (Vdss) of 100V, continuous drain current (Id) of 1.6A at 25°C, and a maximum gate-source voltage (Vgs) of ±20V, this device is well-suited for a wide range of power management and switching applications.

ZXMN10B08E6TA Features

  • Low On-Resistance: With a maximum Rds(on) of 230mOhm at 1.6A and 10V, the ZXMN10B08E6TA offers high efficiency and low power dissipation.
  • High Input Capacitance: A maximum input capacitance (Ciss) of 497pF at 50V ensures fast switching performance.
  • Low Gate Charge: A maximum gate charge (Qg) of 9.2nC at 10V reduces switching losses and improves efficiency.
  • Robust Thermal Performance: With a maximum power dissipation of 1.1W at ambient temperature (Ta), this device can handle demanding power management tasks.
  • Compliance: The ZXMN10B08E6TA is REACH unaffected, RoHS3 compliant, and moisture sensitivity level (MSL) 1, making it suitable for a wide range of applications.

ZXMN10B08E6TA Applications

The ZXMN10B08E6TA is ideal for various applications where high efficiency and low on-resistance are critical:

  • Power Management: In battery-powered devices, such as smartphones and laptops, where energy efficiency is paramount.
  • Motor Control: For brushless DC motors in applications like drones, robotics, and industrial automation.
  • Switching Regulators: In DC-DC converters and other power supply circuits requiring high efficiency and low noise.
  • Audio Amplifiers: For high-fidelity audio applications where low distortion and high linearity are essential.

Conclusion of ZXMN10B08E6TA

The ZXMN10B08E6TA from Diodes Incorporated is a versatile and high-performance N-Channel MOSFET, offering a unique combination of low on-resistance, high input capacitance, and low gate charge. Its robust thermal performance, compliance with industry standards, and suitability for a wide range of applications make it an excellent choice for power management, motor control, switching regulators, and audio amplifiers. With its advanced features and performance benefits, the ZXMN10B08E6TA stands out as a top choice in the competitive landscape of MOSFETs.

FAQ

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