Fairchild (onsemi)

MMBFJ113

MMBFJ113 Description

The MMBFJ113 from Fairchild (onsemi) is a surface-mount N-channel JFET designed for low-power switching and amplification applications. Packaged in a compact SMD/SMT format (supplied in reel packaging), it features a continuous drain current (Id) of 2 mA, a drain-source resistance (Rds On) of 100 Ohms, and a maximum drain-gate voltage (Vdg) of 35 V. With a power dissipation (Pd) of 350 mW and an operating temperature range up to +150°C, this JFET is optimized for high-reliability performance in demanding environments. Its silicon (Si) technology ensures stable operation, while RoHS compliance aligns with modern environmental standards.

MMBFJ113 Features

• Low Rds On (100 Ohms): Minimizes signal loss in switching applications.
• High Vdg (35 V): Supports robust voltage handling in circuits.
• Compact SMD/SMT Package: Ideal for space-constrained PCB designs.
• Wide Temperature Range (-55°C to +150°C): Suitable for industrial and automotive applications.
• Low Power Consumption (2 mA Id): Optimized for battery-operated devices.
• RoHS Compliant: Meets global environmental regulations.

MMBFJ113 Applications

The MMBFJ113 excels in:

• Signal Switching: Low Rds On ensures minimal distortion in audio/rf circuits.
• Sensor Interfaces: High input impedance ideal for precision sensor amplification.
• Battery-Powered Devices: Low Id extends battery life in portable electronics.
• Industrial Controls: Reliable performance in harsh environments (e.g., motor drives, PLCs).
• Test Equipment: Used in low-noise preamplifiers due to its stable Si JFET characteristics.

Conclusion of MMBFJ113

The MMBFJ113 stands out for its balance of low power consumption, high voltage tolerance, and compact form factor, making it a versatile choice for designers needing reliable JFET performance in space-sensitive or power-constrained applications. Its RoHS compliance and industrial-grade durability further enhance its suitability for modern electronic systems.