Goford Semiconductor_GT013N04TI
original

Goford Semiconductor
GT013N04TI

278-GT013N04TI
PDF Datasheet
N40V, 220A,RD<2.5M@10V,VTH2.0V~5
8 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3986 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs
50 nC @ 10 V
Product Status
Active
Supplier Device Package
TO-220
Drain to Source Voltage (Vdss)
40 V
Power Dissipation (Max)
90W (Tc)
Package / Case
TO-220-3
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GT013N04TI Description

Tube provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GT013N04TI belongs to can be classified under the Discrete Semiconductors. GT013N04TI is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GT013N04TI provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for GT013N04TI?
The listed voltage-related specification for GT013N04TI is 40 V.
What is GT013N04TI?
What is the mounting type of GT013N04TI?
What package or case is GT013N04TI available in?
Is GT013N04TI currently in stock?
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