Goford Semiconductor_GT080N10M
original

Goford Semiconductor
GT080N10M

278-GT080N10M
PDF Datasheet
N100V, 70A,RD<7.5M@10V,VTH1V~3V,
8 Weeks

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
Standard
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
2125 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
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GT080N10M Description

Tape & Reel (TR) provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Single FETs, MOSFETs that the GT080N10M belongs to can be classified under the Discrete Semiconductors. GT080N10M is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. GT080N10M provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Goford Semiconductor plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Goford Semiconductor is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Goford Semiconductor builds trust with consumers and enhances the overall reputation of their products.

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Yes. GT080N10M currently shows 1600 unit(s) in stock.
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