The BC817-16 is an NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies, designed for general-purpose amplification and switching applications. With a collector-emitter voltage (Vce) rating of 45V and a maximum collector current (Ic) of 800mA, it offers robust performance in compact SOT23-3 surface-mount packaging. The device features a transition frequency (ft) of 100MHz, making it suitable for high-speed switching, while its low Vce saturation voltage (700mV @ 50mA, 500mA) ensures efficient power handling. The DC current gain (hFE) of 100 @ 100mA, 1V provides stable amplification characteristics. Although marked as obsolete, it remains ROHS3 compliant, adhering to environmental standards.
The BC817-16 is a versatile NPN BJT offering a balance of high current capability, fast switching, and low saturation losses. Its compact SOT23-3 package makes it ideal for space-constrained designs, while its 100MHz ft ensures performance in high-speed applications. Though obsolete, its ROHS3 compliance and robust specs make it a reliable choice for legacy or cost-sensitive projects requiring efficient switching or amplification.
Download datasheets and manufacturer documentation for BC817-16