The BC817K25E6327HTSA1 is a high-performance NPN bipolar junction transistor (BJT) from Infineon Technologies, designed for surface-mount applications in compact electronic circuits. Encased in a SOT-23 package and supplied in Tape & Reel (TR), this transistor offers a robust 45V collector-emitter breakdown voltage (VCEO) and a 500mA continuous collector current (Ic), making it suitable for low-to-medium power switching and amplification. With a transition frequency (fT) of 170MHz, it ensures efficient high-frequency operation, while its low VCE saturation voltage (700mV @ 50mA, 500mA) minimizes power dissipation. The device operates reliably across a junction temperature (TJ) range of up to 150°C and is RoHS3 compliant, adhering to modern environmental standards.
This transistor excels in:
The BC817K25E6327HTSA1 stands out for its balance of voltage tolerance, current handling, and high-frequency capability, outperforming generic NPN transistors in efficiency and thermal resilience. While designated as Last Time Buy, its ROHS3 compliance and Infineon’s quality assurance make it a dependable choice for legacy designs or replacements. Engineers will value its versatility in switching and amplification, particularly in space-constrained, high-reliability applications. For designs requiring low-loss switching or stable gain, this transistor remains a competitive solution.
Download datasheets and manufacturer documentation for BC817K25E6327HTSA1