
Infineon Technologies
BC848CE6327HTSA1
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BC848CE6327HTSA1 Description
BC848CE6327HTSA1 Description
The BC848CE6327HTSA1 is a high-performance NPN bipolar junction transistor (BJT) from Infineon Technologies, designed for surface-mount applications. With a 30V collector-emitter breakdown voltage (VCEO) and a 100mA maximum collector current (Ic), it is optimized for low-power amplification and switching tasks. The device operates efficiently across a wide temperature range up to 150°C (TJ), ensuring reliability in demanding environments. Packaged in a SOT-23 form factor and supplied in Tape & Reel (TR), it is ideal for automated PCB assembly.
BC848CE6327HTSA1 Features
- High DC Current Gain (hFE): 420 (min) @ 2mA, 5V, ensuring strong signal amplification.
- Low Saturation Voltage: 600mV max @ 5mA, 100mA, minimizing power loss in switching applications.
- Low Leakage Current: 15nA (ICBO) cutoff current, enhancing energy efficiency.
- High Transition Frequency (fT): 250MHz, suitable for RF and high-speed switching.
- Robust Packaging: MSL1 (Unlimited) moisture sensitivity, simplifying storage and handling.
- Compliance: ROHS3 and REACH unaffected, meeting environmental regulations.
BC848CE6327HTSA1 Applications
This transistor excels in low-power amplification, signal processing, and switching circuits, including:
- Portable Electronics: Audio amplifiers, sensor interfaces.
- RF Modules: Oscillators, mixers, and frequency multipliers.
- Automotive & Industrial Systems: Logic level shifting, relay drivers.
- Consumer Devices: Remote controls, LED drivers.
Its high gain, low noise, and compact SOT-23 package make it superior to generic NPN transistors in space-constrained designs.
Conclusion of BC848CE6327HTSA1
The BC848CE6327HTSA1 offers a balanced combination of high-frequency performance, low power dissipation, and reliability, making it a versatile choice for modern electronics. Its optimized saturation characteristics and compliance with industry standards ensure seamless integration into automated production lines. Engineers seeking a cost-effective, high-performance NPN transistor for precision applications will find this device an excellent solution.



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