Infineon Technologies_BCR533E6327HTSA1
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Infineon Technologies
BCR533E6327HTSA1

292-BCR533E6327HTSA1
PDF Datasheet
TRANS PREBIAS NPN 50V SOT23
4 weeks

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Tech Specifications

Configuration
Single
PPAP
Unknown
Product Status
Last Time Buy
Voltage - Collector Emitter Breakdown (Max)
50 V
Automotive
Yes
Typical Resistor Ratio
1
Supplier Package
SOT-23
Transistor Type
NPN - Pre-Biased
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BCR533E6327HTSA1 Description

BCR533E6327HTSA1 Description

The BCR533E6327HTSA1 is a high-performance, pre-biased NPN bipolar transistor offered by Infineon Technologies. This device is designed to operate within a frequency range of 100 MHz, making it suitable for various high-frequency applications. With a maximum collector current (Ic) of 500 mA and a collector-emitter breakdown voltage of 50 V, the BCR533E6327HTSA1 delivers excellent performance in power handling and voltage stability.

BCR533E6327HTSA1 Features

  • Technical Specifications:

    • Frequency - Transition: 100 MHz
    • Current - Collector (Ic) (Max): 500 mA
    • Voltage - Collector Emitter Breakdown (Max): 50 V
    • Power - Max: 330 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
    • Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
    • Current - Collector Cutoff (Max): 100nA (ICBO)
    • Resistor - Base (R1): 10 kOhms
    • Resistor - Emitter Base (R2): 10 kOhms
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface Mount technology for easy integration into compact designs
    • ROHS3 compliant, ensuring environmental sustainability
    • REACH Unaffected status, adhering to strict European chemical regulations
    • Last Time Buy product status, indicating a reliable and consistent supply

BCR533E6327HTSA1 Applications

The BCR533E6327HTSA1 is ideal for a variety of applications where high-frequency operation, power handling, and voltage stability are crucial. Some specific use cases include:

  • Audio Amplifiers: Utilizing its high-frequency capabilities and power handling, the BCR533E6327HTSA1 is perfect for audio amplification applications.
  • RF Applications: The device's 100 MHz frequency range makes it suitable for RF applications, such as wireless communication systems.
  • Power Management: With its ability to handle up to 330 mW of power, the BCR533E6327HTSA1 can be used in power management circuits for efficient energy distribution.

Conclusion of BCR533E6327HTSA1

The BCR533E6327HTSA1 from Infineon Technologies is a versatile and high-performing pre-biased NPN bipolar transistor. Its unique combination of technical specifications, performance benefits, and applications make it an excellent choice for various high-frequency and power-sensitive applications. With its Surface Mount technology, ROHS3 compliance, and REACH unaffected status, the BCR533E6327HTSA1 offers a reliable and environmentally friendly solution for your electronic design needs.

FAQ

What is the mounting type of BCR533E6327HTSA1?
BCR533E6327HTSA1 uses a Surface Mount mounting style based on the listed product specifications.
Are there related or alternative parts for BCR533E6327HTSA1?
What operating temperature range does BCR533E6327HTSA1 support?
What is the standard lead time for BCR533E6327HTSA1?
What voltage specification is listed for BCR533E6327HTSA1?
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