Infineon Technologies_BSD223PH6327XTSA1

Infineon Technologies
BSD223PH6327XTSA1  
FET, MOSFET Arrays

BSD223PH6327XTSA1
289-BSD223PH6327XTSA1
Ersa
Infineon Technologies-BSD223PH6327XTSA1-datasheets-9165398.pdf
MOSFET 2P-CH 20V 0.39A SOT363
In Stock : 30003

Not available to buy online? Want the lower wholesale price? Please Send RFQ to get best price, we will respond immediately

QUICK RFQ
ADD TO RFQ LIST
ersa FreeSample ersa flow
ISO9001
Quality Policy
ISO45001
ISO14001

BSD223PH6327XTSA1 Description

BSD223PH6327XTSA1 Description

The BSD223PH6327XTSA1 is a dual P-channel logic-level MOSFET from Infineon Technologies' OptiMOS™ series, designed for high-efficiency, low-power applications. With a 20V drain-to-source voltage (Vdss) and 390mA continuous drain current (Id), this surface-mount device is optimized for compact, energy-sensitive designs. Its 1.2Ω maximum on-resistance (Rds(on)) at 4.5V Vgs ensures minimal conduction losses, while the ultra-low gate charge (Qg) of 0.62nC and input capacitance (Ciss) of 56pF enable fast switching performance. Packaged in SOT-363 (Tape & Reel), it meets ROHS3 and REACH compliance, making it suitable for modern electronics.

BSD223PH6327XTSA1 Features

  • Logic-Level Gate: Operates efficiently at low gate drive voltages (1.2V threshold), ideal for 3.3V/5V systems.
  • Low Power Dissipation: 250mW max power handling with optimized thermal performance.
  • Fast Switching: Minimal Qg and Ciss reduce switching losses, enhancing efficiency in high-frequency applications.
  • Compact Form Factor: SOT-363 package saves PCB space in dense layouts.
  • Reliability: MSL 1 (Unlimited) moisture sensitivity ensures long shelf life and ease of handling.

BSD223PH6327XTSA1 Applications

This MOSFET excels in:

  • Portable Electronics: Power management in smartphones, wearables, and IoT devices due to low Vgs(th) and compact size.
  • Load Switching: Ideal for battery-powered systems requiring efficient on/off control (e.g., sensors, peripherals).
  • Signal Routing: Used in analog/digital multiplexing circuits where low Rds(on) minimizes signal distortion.
  • Automotive Modules: Suitable for low-voltage auxiliary systems (infotainment, lighting) thanks to AEC-Q101-qualified OptiMOS™ technology.

Conclusion of BSD223PH6327XTSA1

The BSD223PH6327XTSA1 combines Infineon's advanced OptiMOS™ technology with a logic-level gate and ultra-low Rds(on), delivering superior efficiency in space-constrained designs. Its balance of low power loss, fast switching, and reliability makes it a standout choice for modern low-voltage applications, from consumer electronics to automotive subsystems. Engineers benefit from its industry-standard compliance and proven performance in demanding environments.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Current - Continuous Drain (Id) @ 25°C
HTSUS
Package
Maximum Drain Source Resistance (MOhm)
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Series
Power - Max
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

BSD223PH6327XTSA1 Documents

Download datasheets and manufacturer documentation for BSD223PH6327XTSA1

Ersa BSD223P      
Ersa Reel Cover Tape Chg 16/Feb/2016      
Ersa Part Number Guide      
Ersa BSD223P      
Ersa MOSFET OptiMOS™ 20V P-Channel Spice Model      
Ersa RoHS Certificate      

Shopping Guide

Payment Methods
Payment Methods include Prepayment TT (bank transfer), Western Union, and PayPal. Customers are responsible for shipping costs, bank charges, customs duties and taxes.
Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service