The BSD223PH6327XTSA1 is a dual P-channel logic-level MOSFET from Infineon Technologies' OptiMOS™ series, designed for high-efficiency, low-power applications. With a 20V drain-to-source voltage (Vdss) and 390mA continuous drain current (Id), this surface-mount device is optimized for compact, energy-sensitive designs. Its 1.2Ω maximum on-resistance (Rds(on)) at 4.5V Vgs ensures minimal conduction losses, while the ultra-low gate charge (Qg) of 0.62nC and input capacitance (Ciss) of 56pF enable fast switching performance. Packaged in SOT-363 (Tape & Reel), it meets ROHS3 and REACH compliance, making it suitable for modern electronics.
This MOSFET excels in:
The BSD223PH6327XTSA1 combines Infineon's advanced OptiMOS™ technology with a logic-level gate and ultra-low Rds(on), delivering superior efficiency in space-constrained designs. Its balance of low power loss, fast switching, and reliability makes it a standout choice for modern low-voltage applications, from consumer electronics to automotive subsystems. Engineers benefit from its industry-standard compliance and proven performance in demanding environments.
Download datasheets and manufacturer documentation for BSD223PH6327XTSA1