Infineon Technologies_BSO615CGXUMA1
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Infineon Technologies
BSO615CGXUMA1

289-BSO615CGXUMA1
PDF Datasheet
MOSFET N/P-CH 60V 3.1A/2A 8DSO
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Tech Specifications

Configuration
N and P-Channel
Typical Turn-Off Delay Time (ns)
125@P Channel|25@N Channel
Input Capacitance (Ciss) (Max) @ Vds
380pF @ 25V, 460pF @ 25V
Gate Charge (Qg) (Max) @ Vgs
22.5nC @ 10V, 20nC @ 10V
Typical Rise Time (ns)
105@P Channel|75@N Channel
PPAP
No
Channel Mode
Enhancement
Typical Turn-On Delay Time (ns)
16@N Channel|24@P Channel
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BSO615CGXUMA1 Description

BSO615CGXUMA1 Description

The BSO615CGXUMA1 is a high-performance MOSFET (Metal Oxide) device from Infineon Technologies, designed for use in various electronic applications. This device is part of the SIPMOS® series and is known for its exceptional performance and reliability. The BSO615CGXUMA1 is a logic level gate FET with a drain to source voltage (Vdss) of 60V, making it suitable for high-voltage applications. It is designed for surface mount applications and is available in a tape and reel (TR) packaging.

BSO615CGXUMA1 Features

  • Logic Level Gate: The BSO615CGXUMA1 is a logic level gate FET, which means it can be directly interfaced with logic level signals without the need for additional level shifters.
  • Low Input Capacitance: The device has a low input capacitance (Ciss) of 380pF @ 25V and 460pF @ 25V, which helps in reducing the overall power consumption and improving the device's performance.
  • Low Gate Charge: The gate charge (Qg) is 22.5nC @ 10V and 20nC @ 10V, which contributes to the device's fast switching performance.
  • Low Rds On: The device has a low Rds On of 110mOhm @ 3.1A, 10V and 300mOhm @ 2A, 10V, which results in lower power dissipation and higher efficiency.
  • High Continuous Drain Current: The BSO615CGXUMA1 can handle a continuous drain current of 3.1A (Ta) and 2A (Ta), making it suitable for high-current applications.
  • Low Vgs(th): The device has a low Vgs(th) of 2V @ 20µA and 2V @ 450µA, which ensures easy turn-on and stable operation.
  • RoHS Compliant: The BSO615CGXUMA1 is compliant with the RoHS3 directive, making it suitable for use in environmentally friendly applications.

BSO615CGXUMA1 Applications

The BSO615CGXUMA1 is ideal for a wide range of applications due to its high performance and reliability. Some of the key applications include:

  • Power Management: The device's high voltage and current ratings make it suitable for use in power management applications, such as power supplies and battery management systems.
  • Industrial Control: The BSO615CGXUMA1 can be used in industrial control applications, such as motor drives and inverters, where high voltage and current ratings are required.
  • Automotive: The device's robust performance and reliability make it suitable for use in automotive applications, such as electric vehicle chargers and powertrain control systems.
  • Communications: The BSO615CGXUMA1 can be used in communication systems, such as base stations and routers, where high-speed switching and low power consumption are required.

Conclusion of BSO615CGXUMA1

The BSO615CGXUMA1 is a high-performance MOSFET from Infineon Technologies that offers exceptional performance and reliability. Its unique features, such as low input capacitance, low gate charge, and low Rds On, make it an ideal choice for a wide range of applications, including power management, industrial control, automotive, and communications. The device's RoHS compliance and surface mount packaging also make it suitable for use in environmentally friendly and compact designs. Overall, the BSO615CGXUMA1 is a versatile and reliable solution for high-performance electronic applications.

FAQ

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