onsemi_NSBC114YPDP6T5G
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onsemi
NSBC114YPDP6T5G

293-NSBC114YPDP6T5G
PDF Datasheet
Trans Digital BJT NPN/PNP 50V 100mA 408mW Automotive 6-Pin SOT-963 T/R
8 Weeks

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APAC
ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Package/Case
SOT-963-6
Collector Emitter Breakdown Voltage
50V
Collector-emitter Voltage-Max
250mV
hFE Min
80
Lead Free
Lead Free
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Operating Temperature
150°C
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NSBC114YPDP6T5G Description

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963

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