Infineon Technologies_BSP149H6327XTSA1

Infineon Technologies
BSP149H6327XTSA1  
Single FETs, MOSFETs

BSP149H6327XTSA1
278-BSP149H6327XTSA1
Ersa
Infineon Technologies-BSP149H6327XTSA1-datasheets-5358056.pdf
MOSFET N-CH 200V 660MA SOT223-4
In Stock : 6424

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BSP149H6327XTSA1 Description

BSP149H6327XTSA1 Description

The BSP149H6327XTSA1 is a high-performance MOSFET N-CH 200V 660mA SOT223-4 device manufactured by Infineon Technologies. This single FET is designed to deliver exceptional performance and reliability in various electronic applications. With its advanced technology and unique features, the BSP149H6327XTSA1 stands out among similar models in the market.

BSP149H6327XTSA1 Features

  • Technology: MOSFET (Metal Oxide)
  • Depletion Mode FET Feature
  • Input Capacitance (Ciss): 430 pF @ 25 V
  • Gate Charge (Qg): 14 nC @ 5 V
  • Drain to Source Voltage (Vdss): 200 V
  • Rds On (Max): 1.8 Ohm @ 660mA, 10V
  • Vgs(th) (Max): 1V @ 400µA
  • Series: SIPMOS®
  • Current - Continuous Drain (Id): 660mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
  • Vgs (Max): ±20V
  • Power Dissipation (Max): 1.8W (Ta)
  • Mounting Type: Surface Mount
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • REACH Status: REACH Unaffected
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Package: Tape & Reel (TR)

BSP149H6327XTSA1 Applications

The BSP149H6327XTSA1 is ideal for a wide range of applications where high performance, reliability, and efficiency are critical. Some specific use cases include:

  1. Power Management: Due to its low Rds On and high drain current, the BSP149H6327XTSA1 is suitable for power management applications in electronic devices.
  2. Automotive Electronics: The device's high voltage rating and robust performance make it ideal for automotive electronics, such as power windows, lighting, and infotainment systems.
  3. Industrial Control: The BSP149H6327XTSA1 can be used in industrial control systems, such as motor drives and power supplies, where high voltage and current ratings are required.
  4. Consumer Electronics: This MOSFET can be employed in consumer electronics like smartphones, tablets, and laptops for power management and signal processing.

Conclusion of BSP149H6327XTSA1

The BSP149H6327XTSA1 from Infineon Technologies is a powerful and versatile MOSFET that offers exceptional performance, reliability, and efficiency. Its unique features, such as Depletion Mode operation, low Rds On, and high voltage rating, make it an ideal choice for various applications in power management, automotive electronics, industrial control, and consumer electronics. With its advanced technology and compliance with REACH and RoHS standards, the BSP149H6327XTSA1 is a reliable and eco-friendly solution for your electronic design needs.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Pulsed Drain Current @ TC=25°C (A)
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Supplier Temperature Grade
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Typical Reverse Recovery Charge (nC)
Pin Count
Mounting
Minimum Gate Threshold Voltage (V)
Typical Reverse Transfer Capacitance @ Vds (pF)
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Typical Gate to Drain Charge (nC)
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
Typical Reverse Recovery Time (ns)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Typical Gate to Source Charge (nC)
Maximum Positive Gate Source Voltage (V)
Mfr
Vgs (Max)
Typical Drain Source Resistance @ 25°C (mOhm)
RoHS Status
Typical Gate Threshold Voltage (V)
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Maximum Diode Forward Voltage (V)
Series
Typical Diode Forward Voltage (V)
Operating Junction Temperature (°C)
Typical Output Capacitance (pF)
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

BSP149H6327XTSA1 Documents

Download datasheets and manufacturer documentation for BSP149H6327XTSA1

Ersa BSP149      
Ersa Mult Dev Cover Tape Chg 9/Mar/2020       Mult Dev Pkg Update 28/May/2020      
Ersa Part Number Guide      
Ersa BSP149      
Ersa OptiMOS™ Power MOSFET 200V N-Channel Spice Model      
Ersa RoHS Certificate      

Shopping Guide

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