Infineon Technologies

IRF2805PBF  

Single FETs, MOSFETs

IRF2805PBF Description

The IRF2805PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for demanding applications that require high voltage and current capabilities. With a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 75A at 25°C, this device offers excellent performance in a variety of electronic systems.

IRF2805PBF Features

• Technology: MOSFET (Metal Oxide), leveraging Infineon's advanced HEXFET® series for superior performance.
• Input Capacitance (Ciss): Maximum of 5110 pF at 25V, ensuring fast switching speeds and low power consumption.
• Gate Charge (Qg): Maximum of 230 nC at 10V, contributing to high efficiency and reduced switching losses.
• Drain to Source Voltage (Vdss): 55V, suitable for high-voltage applications.
• Power Dissipation (Max): 330W at Tc, allowing for high power handling in various electronic devices.
• Rds On (Max) @ Id, Vgs: 4.7mOhm at 104A and 10V, providing low on-resistance for efficient power delivery.
• Vgs(th) (Max) @ Id: 4V at 250µA, ensuring reliable threshold voltage performance.
• Mounting Type: Through Hole, offering robust mechanical support and ease of integration.
• Package: Tube, providing protection and ease of handling during assembly.
• RoHS Compliance: ROHS3 Compliant, adhering to environmental regulations.
• Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating minimal sensitivity to moisture, enhancing reliability in various environments.

IRF2805PBF Applications

The IRF2805PBF is ideal for applications where high voltage and current handling are critical, such as:

• Power Supplies: Due to its high Vdss and Id ratings, it is suitable for power supply designs requiring robust performance.
• Motor Controls: The low Rds On and high Id make it an excellent choice for motor control applications, ensuring efficient power transfer and motor operation.
• Industrial Automation: Its high power dissipation and robust construction make it suitable for industrial automation systems that demand reliability and durability.

Conclusion of IRF2805PBF

The IRF2805PBF stands out with its combination of high voltage and current capabilities, low on-resistance, and fast switching speeds. Its compliance with RoHS and REACH regulations, along with its robust construction, make it a preferred choice for designers looking for a reliable and efficient N-Channel MOSFET. Its performance benefits and unique features position it as a leading solution in high-power electronic applications.

IRF2805PBF Documents

Download datasheets and manufacturer documentation for IRF2805PBF

Datasheets :

IRF2805PbF      

Other Related Documents :

IR Part Numbering System      

HTML Datasheet :

IRF2805PbF      

Simulation Models :

IRF2805PBF Saber Model      

Environmental Information :

RoHS Certificate