Infineon Technologies_BSP613PH6327XTSA1

Infineon Technologies
BSP613PH6327XTSA1  
Single FETs, MOSFETs

BSP613PH6327XTSA1
278-BSP613PH6327XTSA1
Ersa
Infineon Technologies-BSP613PH6327XTSA1-datasheets-8658226.pdf
MOSFET P-CH 60V 2.9A SOT223-4
In Stock : 6387

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BSP613PH6327XTSA1 Description

BSP613PH6327XTSA1 Description

The BSP613PH6327XTSA1 is a high-performance P-Channel MOSFET from Infineon Technologies, designed for a wide range of applications in the electronics industry. This MOSFET offers excellent technical specifications and performance benefits, making it an ideal choice for various applications.

BSP613PH6327XTSA1 Features

  • Technology: MOSFET (Metal Oxide), ensuring high efficiency and reliability.
  • Drain to Source Voltage (Vdss): 60V, suitable for high-voltage applications.
  • Current - Continuous Drain (Id) @ 25°C: 2.9A, providing ample current for most applications.
  • Rds On (Max) @ Id, Vgs: 130mOhm @ 2.9A, 10V, ensuring low on-resistance for efficient power management.
  • Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, minimizing switching losses.
  • Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V, reducing parasitic capacitance and improving high-frequency performance.
  • Vgs (Max): ±20V, allowing for a wide range of gate voltages.
  • Vgs(th) (Max) @ Id: 4V @ 1mA, ensuring low threshold voltage for efficient operation.
  • Power Dissipation (Max): 1.8W (Ta), suitable for applications with moderate power dissipation requirements.
  • Mounting Type: Surface Mount, facilitating easy integration into surface-mount technology (SMT) processes.
  • Package: Tape & Reel (TR), enabling automated assembly and reducing handling costs.
  • Series: SIPMOS®, a family of high-performance MOSFETs known for their reliability and efficiency.
  • Product Status: Active, ensuring ongoing availability and support.
  • REACH Status: REACH Unaffected, compliant with European Union regulations on the Registration, Evaluation, Authorization, and Restriction of Chemicals (REACH).
  • RoHS Status: ROHS3 Compliant, adhering to the Restriction of Hazardous Substances Directive.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), indicating low sensitivity to moisture and facilitating storage and handling.
  • ECCN: EAR99, indicating that the product is not subject to export controls under the Export Administration Regulations (EAR).

BSP613PH6327XTSA1 Applications

The BSP613PH6327XTSA1 is ideal for a variety of applications where high performance, efficiency, and reliability are critical. Some specific use cases include:

  • Power Management: In power supply circuits, where high efficiency and low on-resistance are essential for minimizing power losses.
  • Motor Control: For controlling the speed and direction of electric motors, where high current and voltage ratings are required.
  • Automotive Applications: In automotive electronics, where high voltage and temperature stability are crucial for safety and reliability.
  • Industrial Control Systems: For controlling various industrial processes, where high power dissipation and robustness are necessary.

Conclusion of BSP613PH6327XTSA1

The BSP613PH6327XTSA1 is a high-performance P-Channel MOSFET from Infineon Technologies, offering excellent technical specifications and performance benefits. Its unique features, such as low on-resistance, high voltage and current ratings, and compliance with industry standards, make it an ideal choice for a wide range of applications in power management, motor control, automotive electronics, and industrial control systems. With its ongoing availability and support, the BSP613PH6327XTSA1 is a reliable and efficient solution for demanding electronics applications.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Qualification
Rise Time
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

BSP613PH6327XTSA1 Documents

Download datasheets and manufacturer documentation for BSP613PH6327XTSA1

Ersa BSP613P      
Ersa Mult Dev Cover Tape Chg 9/Mar/2020       Mult Dev Pkg Update 28/May/2020      
Ersa Part Number Guide      
Ersa BSP613P      
Ersa MOSFET OptiMOS™ 60V P-Channel Spice Model      
Ersa RoHS Certificate      

Shopping Guide

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