Infineon Technologies

IDB10S60C  

Single Diodes

IDB10S60C Description

The IDB10S60C is a high-performance, single diode from Infineon Technologies, featuring advanced SiC (Silicon Carbide) Schottky technology. This device is part of the CoolSiC™+ series and is designed for high-efficiency and low-power loss applications. With a maximum reverse voltage of 600V and an average rectified current of 10A, the IDB10S60C is suitable for demanding power electronics applications.

IDB10S60C Features

• SiC Schottky Technology: The IDB10S60C leverages SiC Schottky technology, which offers superior performance compared to traditional silicon-based diodes. This technology enables lower forward voltage drops, higher switching speeds, and improved thermal stability.
• No Recovery Time: The IDB10S60C has no recovery time, which means it can handle high-frequency applications with ease, reducing power loss and improving efficiency.
• Low Reverse Recovery Time (trr): With a reverse recovery time of 0 ns, the IDB10S60C minimizes switching losses and EMI, making it ideal for high-speed switching applications.
• Low Forward Voltage (Vf): The IDB10S60C has a maximum forward voltage of 1.7V at 10A, contributing to low power loss and high efficiency in power conversion applications.
• Low Reverse Leakage Current: At 600V, the reverse leakage current is only 140 µA, ensuring minimal power loss and high reliability in reverse bias conditions.
• Surface Mount Package: The IDB10S60C is available in a surface-mount package, which allows for compact and efficient PCB layouts, suitable for space-constrained applications.

IDB10S60C Applications

The IDB10S60C is ideal for a wide range of power electronics applications, including:

1. Power Supplies: Due to its low forward voltage and high efficiency, the IDB10S60C is suitable for power supply designs, such as AC-DC and DC-DC converters.
2. Renewable Energy Systems: The IDB10S60C can be used in solar inverters and wind power systems, where high efficiency and reliability are critical.
3. Electric Vehicles (EVs): The IDB10S60C's high voltage and current ratings make it suitable for EV charging systems and powertrain applications.
4. Industrial Automation: In motor drives and control systems, the IDB10S60C's fast switching capabilities and low power loss contribute to improved system performance.

Conclusion of IDB10S60C

The IDB10S60C from Infineon Technologies is a high-performance, SiC Schottky diode designed for demanding power electronics applications. Its unique features, such as no recovery time, low forward voltage, and fast switching capabilities, make it an ideal choice for high-efficiency power conversion and high-speed switching applications. While the IDB10S60C is now considered obsolete, its advanced features and performance benefits make it a valuable component for legacy systems and applications where high reliability and efficiency are paramount.

IDB10S60C Documents

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