Infineon Technologies
IPB47N10S-33

285-IPB47N10S-33
SIPMOS Power-Transistor Feature N-Channel Enhancement mode

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ISO9001
Quality Policy
ISO45001
ISO14001
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Tech Specifications

Drain Source Voltage
100V
Vgs (Maximum)
±20V
Rds On (Maximum) @ Id, Vgs
33 mOhm @ 33A, 10V
Gate Charge (Qg) (Maximum) @ Vgs
105nC @ 10V
Estimated EOL Date
2019
Manufacturer Package
PG-TO263-3-2
Operating Temperature Range
-55°C ~ 175°C (TJ)
ECCN
EAR99
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IPB47N10S-33 Description

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the IPB47N10S-33 belongs to can be classified under the Discrete Semiconductors. IPB47N10S-33 is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IPB47N10S-33 provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for IPB47N10S-33?
The listed voltage-related specification for IPB47N10S-33 is 100V.
Are there related or alternative parts for IPB47N10S-33?
What is the mounting type of IPB47N10S-33?
What operating temperature range does IPB47N10S-33 support?
What is IPB47N10S-33?
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