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IPB60R099CPATMA1

IPB60R099CPATMA1 Description

The IPB60R099CPATMA1 is a high-performance MOSFET N-CH 600V 31A TO263-3 from Infineon Technologies. This single FET is designed for demanding applications that require high power dissipation, low on-resistance, and fast switching capabilities. With a maximum drain-to-source voltage of 600V, continuous drain current of 31A at 25°C, and a maximum power dissipation of 255W, this device is ideal for high-voltage, high-current applications.

IPB60R099CPATMA1 Features

• Technology: MOSFET (Metal Oxide) - Provides excellent electrical performance and reliability.
• Input Capacitance (Ciss): 2800 pF @ 100 V - Minimizes capacitive effects and improves switching performance.
• Gate Charge (Qg): 80 nC @ 10 V - Reduces switching losses and improves efficiency.
• Rds On (Max): 99 mOhm @ 18A, 10V - Offers low on-resistance for high-efficiency power conversion.
• Vgs(th) (Max): 3.5V @ 1.2mA - Ensures reliable gate control and fast switching.
• Drive Voltage: 10V - Simplifies gate drive requirements and reduces complexity.
• Mounting Type: Surface Mount - Facilitates high-density PCB layouts and improved thermal management.
• REACH Status: REACH Unaffected - Complies with European Union regulations for safe use in electronic products.
• RoHS Status: ROHS3 Compliant - Ensures environmental compliance and eco-friendliness.

IPB60R099CPATMA1 Applications

The IPB60R099CPATMA1 is ideally suited for a wide range of high-voltage, high-current applications, including:

1. Power Supplies: High-efficiency power conversion and regulation in switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
2. Industrial Control: Motor drives,, and other high-power control applications requiring precise current and voltage regulation.
3. Automotive: Electric vehicle (EV) charging systems, battery management systems, and power electronics for electric and hybrid vehicles.
4. Renewable Energy: Solar inverters, wind power converters, and energy storage systems requiring high-voltage, high-current switching.

Conclusion of IPB60R099CPATMA1

The IPB60R099CPATMA1 from Infineon Technologies is a powerful, reliable, and efficient MOSFET designed for high-voltage, high-current applications. Its unique features, such as low on-resistance, fast switching, and excellent thermal management, make it an ideal choice for demanding power electronics applications. With its compliance with REACH and RoHS regulations, this device is not only technologically advanced but also environmentally responsible.