Infineon Technologies_IPD50R399CP
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Infineon Technologies
IPD50R399CP

278-IPD50R399CP
PDF Datasheet
MOSFET N-CH 500V 9A TO252-3

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-TO252-3-11
Drain to Source Voltage (Vdss)
500 V
Power Dissipation (Max)
83W (Tc)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
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IPD50R399CP Description

IPD50R399CP Description

The IPD50R399CP is a high-performance N-Channel MOSFET from Infineon Technologies. It is part of the CoolMOS™ CP series, known for its superior efficiency and reliability. With a drain-to-source voltage (Vdss) of 500V and a continuous drain current (Id) of 9A at 25°C, this MOSFET is designed for high-power applications. The device is surface-mountable and comes in a TO252-3 package, making it suitable for a wide range of electronic devices.

IPD50R399CP Features

  • Technology: MOSFET (Metal Oxide) - Provides excellent electrical characteristics and reliability.
  • Input Capacitance (Ciss): 890 pF @ 100 V - Minimizes input capacitance for faster switching speeds.
  • Gate Charge (Qg): 23 nC @ 10 V - Reduces switching losses and improves efficiency.
  • Rds On (Max): 399 mOhm @ 4.9A, 10V - Offers low on-resistance for minimal power dissipation.
  • Vgs(th) (Max): 3.5V @ 330µA - Ensures reliable turn-on and stable operation.
  • Power Dissipation (Max): 83W (Tc) - Capable of handling high power loads.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited) - Suitable for harsh environmental conditions.
  • REACH Status: REACH Unaffected - Compliant with European chemical regulations.

IPD50R399CP Applications

The IPD50R399CP is ideal for applications requiring high power and efficiency, such as:

  1. Power Supplies: Its high Vdss and low Rds On make it suitable for power supply designs.
  2. Motor Controls: The device's low gate charge and high current capability make it ideal for motor control applications.
  3. Industrial Automation: The high power dissipation and robustness of the IPD50R399CP make it suitable for industrial automation systems.
  4. Automotive Electronics: The device's high voltage and current ratings, along with its robustness, make it suitable for automotive electronics applications.

Conclusion of IPD50R399CP

The IPD50R399CP is a high-performance N-Channel MOSFET from Infineon Technologies, offering excellent electrical characteristics and reliability. Its low on-resistance, high voltage and current ratings, and robustness make it ideal for high-power applications such as power supplies, motor controls, industrial automation, and automotive electronics. Despite being obsolete, the IPD50R399CP remains a popular choice for its unique features and advantages over similar models.

FAQ

What voltage specification is listed for IPD50R399CP?
The listed voltage-related specification for IPD50R399CP is 500 V.
What is IPD50R399CP?
What is the mounting type of IPD50R399CP?
What package or case is IPD50R399CP available in?
Are there related or alternative parts for IPD50R399CP?
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