Infineon Technologies_IPD16CNE8N G
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Infineon Technologies
IPD16CNE8N G

285-IPD16CNE8N G
PDF Datasheet
MOSFET N-CH 85V 53A TO252-3

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Tech Specifications

Drain Source Voltage
85V
Vgs (Maximum)
±20V
Rds On (Maximum) @ Id, Vgs
16 mOhm @ 53A, 10V
Gate Charge (Qg) (Maximum) @ Vgs
48nC @ 10V
Manufacturer Package
PG-TO252-3
Operating Temperature Range
-55°C ~ 175°C (TJ)
Mounting
SMD
Series
OptiMOS
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IPD16CNE8N G Description

Reel package provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the IPD16CNE8N G belongs to can be classified under the Discrete Semiconductors. IPD16CNE8N G is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. IPD16CNE8N G provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. Infineon Technologies plays a crucial role in ensuring the smooth flow of goods and meeting market demand. Infineon Technologies is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, Infineon Technologies builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is IPD16CNE8N G?
IPD16CNE8N G is a RF FETs, MOSFETs from Infineon Technologies. This product page provides its main specifications, pricing information, availability, and inquiry options.
Are there related or alternative parts for IPD16CNE8N G?
What is the mounting type of IPD16CNE8N G?
What operating temperature range does IPD16CNE8N G support?
What voltage specification is listed for IPD16CNE8N G?
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