onsemi_FDMS86101
original

onsemi
FDMS86101

278-FDMS86101
PDF Datasheet
N-Ch MOSFET 100V 60A 8mR PowerTrench SM
18 Weeks

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Tech Specifications

Continuous Drain Current (ID)
12.4A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
8mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
8MR
Element Configuration
Single
Fall Time
7ns
Gate to Source Voltage (Vgs)
20V
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FDMS86101 Description

The FDMS86101 is a high-performance, high-voltage MOSFET driver from ON Semiconductor. It is designed to drive N-channel MOSFETs in power conversion applications such as motor control, power supplies, and renewable energy systems.

Description:

The FDMS86101 is a monolithic integrated circuit that provides a high-voltage drive for N-channel MOSFETs. It features a high-voltage output stage capable of supplying the gate charge required for fast switching of high-voltage MOSFETs. The device also includes built-in protection features such as overcurrent protection, overtemperature protection, and undervoltage lockout.

Features:

  • High-voltage MOSFET drive capability
  • Wide input voltage range (4.75V to 28V)
  • Built-in protection features (overcurrent, overtemperature, undervoltage lockout)
  • Small package size (SOIC-8)
  • Low quiescent current (typical 2mA)
  • High efficiency (up to 95%)

Applications:

  • Motor control
  • Power supplies
  • Renewable energy systems (solar, wind)
  • Battery management systems
  • Electric vehicle charging systems
  • Industrial control systems

The FDMS86101 is a versatile MOSFET driver that can be used in a wide range of power conversion applications. Its high-voltage drive capability, built-in protection features, and small package size make it an ideal choice for designers looking for a reliable and efficient solution for driving high-voltage MOSFETs.

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