Infineon Technologies

IPD30N03S4L09ATMA1  

Single FETs, MOSFETs

IPD30N03S4L09ATMA1 Description

The IPD30N03S4L09ATMA1 is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high efficiency and reliability. With a drain to source voltage (Vdss) of 30 V and a continuous drain current (Id) of 30 A at 25°C, this device delivers excellent electrical performance. The low on-resistance (Rds On) of 9 mOhm at 30 A and 10 V ensures minimal power loss, making it ideal for power management applications.

IPD30N03S4L09ATMA1 Features

• Technology: MOSFET (Metal Oxide) - Provides high efficiency and reliability in power management applications.
• Input Capacitance (Ciss): 1520 pF @ 15 V - Minimizes input capacitance, reducing switching losses.
• Gate Charge (Qg): 20 nC @ 10 V - Low gate charge for fast switching and reduced power consumption.
• Drain to Source Voltage (Vdss): 30 V - Suitable for applications requiring high voltage handling.
• Continuous Drain Current (Id): 30 A at 25°C - Capable of handling high current loads.
• On-Resistance (Rds On): 9 mOhm @ 30 A, 10 V - Low resistance for minimal power loss.
• Gate Threshold Voltage (Vgs(th)): 2.2 V @ 13 µA - Ensures reliable device operation.
• Drive Voltage: 4.5 V (Max Rds On), 10 V (Min Rds On) - Provides flexibility in gate drive requirements.

IPD30N03S4L09ATMA1 Applications

The IPD30N03S4L09ATMA1 is ideal for a variety of applications where high efficiency and reliability are critical:

1. Power Management: Due to its low on-resistance and high voltage handling capabilities, this device is well-suited for power management applications, such as power supplies and battery management systems.
2. Industrial Control: Its robust performance makes it suitable for industrial control applications, including motor drives and inverters.
3. Automotive: The IPD30N03S4L09ATMA1 can be used in automotive applications, such as electric vehicle chargers and powertrain control systems, thanks to its high current and voltage ratings.

Conclusion of IPD30N03S4L09ATMA1

The IPD30N03S4L09ATMA1 from Infineon Technologies is a high-performance N-Channel MOSFET that offers excellent electrical characteristics and reliability. Its low on-resistance, high voltage and current ratings, and fast switching capabilities make it an ideal choice for power management, industrial control, and automotive applications. With its unique features and advantages over similar models, the IPD30N03S4L09ATMA1 is a reliable and efficient solution for demanding electronic systems.

IPD30N03S4L09ATMA1 Documents

Download datasheets and manufacturer documentation for IPD30N03S4L09ATMA1

PCN Assembly/Origin :

Mult Dev Wafer Fab 12/Feb/2019      

Datasheets :

IPD30N03S4L-09      

PCN Packaging :

Cover Tape Width Cancellation 14/Jul/2015      

Other Related Documents :

Part Number Guide      

HTML Datasheet :

IPD30N03S4L-09      

Environmental Information :

RoHS Certificate