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IPD50R3K0CEAUMA1

IPD50R3K0CEAUMA1 Description

The IPD50R3K0CEAUMA1 is a high-performance MOSFET N-CH 500V 1.7A TO252-3 from Infineon Technologies, a leading manufacturer in the electronics industry. This single FET is designed for applications requiring high power dissipation and low on-resistance. With a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 1.7A at 25°C, the IPD50R3K0CEAUMA1 offers excellent performance in various electronic devices.

IPD50R3K0CEAUMA1 Features

• Technology: MOSFET (Metal Oxide) - Provides high efficiency and low power loss.
• Input Capacitance (Ciss): 84 pF @ 100 V - Minimizes input capacitance, reducing power consumption.
• Gate Charge (Qg): 4.3 nC @ 10 V - Ensures fast switching and low power dissipation.
• Rds On (Max): 3 Ohm @ 400mA, 13V - Offers low on-resistance for efficient power transfer.
• Vgs(th) (Max): 3.5V @ 30µA - Provides stable gate threshold voltage for reliable operation.
• Drive Voltage: 13V - Allows for efficient gate driving and control.
• Power Dissipation (Max): 26W (Tc) - Capable of handling high power dissipation in various applications.
• Mounting Type: Surface Mount - Facilitates easy integration into surface-mount technology (SMT) designs.

IPD50R3K0CEAUMA1 Applications

The IPD50R3K0CEAUMA1 is ideal for applications where high power dissipation, low on-resistance, and fast switching are required. Some specific use cases include:

1. Power Supplies: Due to its high power dissipation capabilities, the IPD50R3K0CEAUMA1 is suitable for power supply designs, such as SMPS (Switched-Mode Power Supplies) and linear regulators.
2. Motor Control: The low on-resistance and fast switching characteristics make it an excellent choice for motor control applications, including brushless DC motors and stepper motors.
3. Industrial Automation: The IPD50R3K0CEAUMA1 can be used in various industrial automation applications, such as robotics, conveyor systems, and machine control systems, where high power dissipation and reliability are critical.

Conclusion of IPD50R3K0CEAUMA1

The IPD50R3K0CEAUMA1 from Infineon Technologies is a high-performance MOSFET designed for applications requiring high power dissipation and low on-resistance. Its unique features, such as low input capacitance, fast switching, and stable gate threshold voltage, make it an excellent choice for power supplies, motor control, and industrial automation applications. With its robust performance and compliance with industry standards like RoHS3 and REACH, the IPD50R3K0CEAUMA1 is a reliable and efficient solution for demanding electronic designs.