
Infineon Technologies
IPD70R950CEAUMA1
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IPD70R950CEAUMA1 Description
IPD70R950CEAUMA1 Description
The IPD70R950CEAUMA1 is a high-performance MOSFET (Metal Oxide) from Infineon Technologies, designed for applications requiring high voltage and current capabilities. With a drain to source voltage (Vdss) of 700V and continuous drain current (Id) of 7.4A at 25°C, this N-channel device offers robust performance in demanding electronic systems.
IPD70R950CEAUMA1 Features
- High Voltage and Current Handling: Capable of withstanding 700V drain to source voltage and 7.4A continuous drain current, making it suitable for high-power applications.
- Low On-Resistance: Maximum Rds(on) of 950mOhm at 1.5A and 10V, reducing power losses and improving efficiency.
- Low Gate Charge: Maximum gate charge (Qg) of 15.3nC at 10V, enabling fast switching and reducing switching losses.
- Robust Construction: Moisture Sensitivity Level (MSL) of 3, allowing for 168 hours of storage before baking is required.
- Compliance and Certification: RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.
- Surface Mount Packaging: Designed for surface mount applications, facilitating integration into modern electronic designs.
IPD70R950CEAUMA1 Applications
The IPD70R950CEAUMA1 is ideal for applications that require high voltage and current handling with low on-resistance, such as:
- Power Supplies: In switch mode power supplies (SMPS) and other power conversion systems.
- Industrial Automation: For motor control and protection circuits in industrial machinery.
- Automotive Electronics: In high-voltage applications within electric and hybrid vehicles.
- Renewable Energy: In solar inverters and wind power systems for efficient energy conversion.
Conclusion of IPD70R950CEAUMA1
The IPD70R950CEAUMA1 stands out for its high voltage and current capabilities, low on-resistance, and fast switching characteristics. Despite being classified as obsolete, it remains a viable option for legacy systems or applications where its specific performance profile is required. Its robust design, compliance with environmental standards, and surface mount packaging make it suitable for a range of high-power electronic applications.



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