The IPW60R041C6FKSA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power electronics applications. Part of the CoolMOS™ series, it features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 77.5A (Tc), making it suitable for high-power switching. With an ultra-low on-resistance (Rds(on)) of 41mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing efficiency in power conversion systems. Packaged in a TO-247-3 through-hole format, it ensures robust thermal performance with a maximum power dissipation of 481W (Tc).
This MOSFET excels in high-efficiency power systems, including:
The IPW60R041C6FKSA1 stands out for its low Rds(on), high current capability, and robust thermal performance, making it ideal for high-power, high-efficiency applications. While not recommended for new designs, its proven reliability in Infineon’s CoolMOS™ series ensures it remains a strong choice for legacy systems requiring high-voltage switching with minimal losses. Engineers can leverage its performance in demanding environments like industrial automation, renewable energy, and motor control.
Download datasheets and manufacturer documentation for IPW60R041C6FKSA1