Infineon Technologies_IPW60R041C6FKSA1

Infineon Technologies
IPW60R041C6FKSA1  
Single FETs, MOSFETs

IPW60R041C6FKSA1
278-IPW60R041C6FKSA1
Ersa
Infineon Technologies-IPW60R041C6FKSA1-datasheets-7674166.pdf
MOSFET N-CH 600V 77.5A TO247-3
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IPW60R041C6FKSA1 Description

IPW60R041C6FKSA1 Description

The IPW60R041C6FKSA1 from Infineon Technologies is a high-performance N-channel MOSFET designed for demanding power electronics applications. Part of the CoolMOS™ series, it features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 77.5A (Tc), making it suitable for high-power switching. With an ultra-low on-resistance (Rds(on)) of 41mΩ at 10V gate drive, this MOSFET minimizes conduction losses, enhancing efficiency in power conversion systems. Packaged in a TO-247-3 through-hole format, it ensures robust thermal performance with a maximum power dissipation of 481W (Tc).

IPW60R041C6FKSA1 Features

  • High Voltage & Current Handling: 600V Vdss and 77.5A Id for high-power applications.
  • Low Rds(on): 41mΩ @ 10V reduces conduction losses, improving efficiency.
  • Fast Switching: Optimized gate charge (Qg = 290nC @ 10V) and input capacitance (Ciss = 6530pF @ 10V) for reduced switching losses.
  • Robust Thermal Performance: TO-247-3 package with high power dissipation capability (481W).
  • Wide Gate Drive Range: Supports ±20V Vgs, offering flexibility in drive circuitry.
  • Reliability: ROHS3 compliant, REACH unaffected, and MSL 1 (unlimited) for long-term durability.

IPW60R041C6FKSA1 Applications

This MOSFET excels in high-efficiency power systems, including:

  • Switched-Mode Power Supplies (SMPS): High-voltage DC-DC converters and PFC stages.
  • Motor Drives & Inverters: Efficient switching in industrial and automotive motor control.
  • Renewable Energy Systems: Solar inverters and wind power converters.
  • Industrial Power Modules: High-current switching in UPS and welding equipment.

Conclusion of IPW60R041C6FKSA1

The IPW60R041C6FKSA1 stands out for its low Rds(on), high current capability, and robust thermal performance, making it ideal for high-power, high-efficiency applications. While not recommended for new designs, its proven reliability in Infineon’s CoolMOS™ series ensures it remains a strong choice for legacy systems requiring high-voltage switching with minimal losses. Engineers can leverage its performance in demanding environments like industrial automation, renewable energy, and motor control.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
Category
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Package Length
Typical Gate Charge @ 10V (nC)
Series
Tab
Part Status
Maximum Gate Threshold Voltage (V)
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Fall Time
RoHS
Qg - Gate Charge
Tradename
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Length
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

IPW60R041C6FKSA1 Documents

Download datasheets and manufacturer documentation for IPW60R041C6FKSA1

Ersa IPW60R041C6      
Ersa Part Number Guide      
Ersa IPW60R041C6      
Ersa CoolMOS™ Power MOSFET 600V C6 Spice Model      

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