Infineon Technologies_IRF200S234
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Infineon Technologies
IRF200S234

278-IRF200S234
PDF Datasheet
MOSFET N-CH 200V 90A D2PAK

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
6484 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
162 nC @ 10 V
Product Status
Obsolete
Supplier Device Package
PG-TO263-3
Drain to Source Voltage (Vdss)
200 V
Power Dissipation (Max)
417W (Tc)
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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IRF200S234 Description

IRF200S234 Description

The IRF200S234 is a high-performance N-channel MOSFET manufactured by Infineon Technologies. This device is designed for applications requiring high power dissipation and fast switching capabilities. With a drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 90A at 25°C, the IRF200S234 is well-suited for demanding power electronics applications.

IRF200S234 Features

  • High Power Dissipation: The IRF200S234 can handle a maximum power dissipation of 417W at the case temperature (Tc), making it ideal for high-power applications.
  • Low On-Resistance: With a maximum Rds(on) of 16.9mOhm at 51A and 10V, the IRF200S234 offers low conduction losses, improving efficiency in power conversion circuits.
  • Fast Switching: The device has a maximum gate charge (Qg) of 162nC at 10V, enabling fast switching and reducing switching losses.
  • Robust Gate Drive: The IRF200S234 can handle a maximum gate-source voltage (Vgs) of ±20V, providing robust gate drive capabilities.
  • Surface Mount Packaging: The device is available in a D2PAK package, suitable for surface-mount applications in compact spaces.
  • Environmental Compliance: The IRF200S234 is REACH unaffected and RoHS3 compliant, ensuring compliance with environmental regulations.

IRF200S234 Applications

The IRF200S234 is ideal for a variety of high-power applications, including:

  • Power Supplies: Due to its high voltage and current ratings, the IRF200S234 is well-suited for power supply designs, such as switch-mode power supplies (SMPS) and uninterruptible power supplies (UPS).
  • Motor Control: The device's fast switching capabilities make it suitable for motor control applications, such as electric vehicles (EVs) and industrial motor drives.
  • Industrial Automation: The IRF200S234 can be used in industrial automation systems, such as robotic arms and conveyor systems, where high power and fast switching are required.

Conclusion of IRF200S234

The IRF200S234 is a high-performance N-channel MOSFET from Infineon Technologies, offering a combination of high power dissipation, low on-resistance, and fast switching capabilities. Its robust gate drive and surface-mount packaging make it suitable for a wide range of high-power applications, including power supplies, motor control, and industrial automation. While the IRF200S234 is now considered obsolete, its unique features and advantages make it a valuable option for legacy systems and applications where high performance and reliability are critical.

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