Infineon Technologies_IRFP4868PBF
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Infineon Technologies
IRFP4868PBF

278-IRFP4868PBF
PDF Datasheet
MOSFET N-CH 300V 70A TO247AC
12 weeks

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Tech Specifications

Configuration
Single
Typical Turn-Off Delay Time (ns)
62
Maximum Gate Source Leakage Current (nA)
100
Input Capacitance (Ciss) (Max) @ Vds
10774 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Typical Rise Time (ns)
16
PPAP
No
Channel Mode
Enhancement
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IRFP4868PBF Description

IRFP4868PBF Description

The IRFP4868PBF is a high-performance N-Channel MOSFET from Infineon Technologies, designed for applications requiring high voltage and current handling capabilities. With a drain-to-source voltage (Vdss) of 300V and a continuous drain current (Id) of 70A at 25°C, this MOSFET is well-suited for power electronics applications. The device features a low on-resistance (Rds On) of 32mOhm at 42A and 10V, ensuring efficient power dissipation. The IRFP4868PBF is packaged in a TO247AC tube package, making it suitable for through-hole mounting in various electronic systems.

IRFP4868PBF Features

  • High Voltage and Current Handling: With a Vdss of 300V and Id of 70A, the IRFP4868PBF can handle high voltage and current loads in power electronics applications.
  • Low On-Resistance: The low Rds On of 32mOhm at 42A and 10V ensures efficient power dissipation and reduces power losses in the system.
  • Robust Gate Drive: The device has a maximum gate-source voltage (Vgs) of ±20V, providing a robust gate drive for reliable operation.
  • High Input Capacitance: The IRFP4868PBF has a high input capacitance (Ciss) of 10774 pF at 50V, enabling fast switching speeds and improved performance in high-frequency applications.
  • Low Gate Charge: The low gate charge (Qg) of 270 nC at 10V reduces the gate drive power requirements and improves the overall efficiency of the system.
  • Compliance with Industry Standards: The IRFP4868PBF is compliant with the RoHS3 standard, making it suitable for environmentally friendly applications. It also has a moisture sensitivity level (MSL) of 1, allowing for unlimited storage time before use.

IRFP4868PBF Applications

The IRFP4868PBF is ideal for various power electronics applications, including:

  1. Switching Power Supplies: The high voltage and current handling capabilities make it suitable for use in switching power supplies, where efficient power conversion is critical.
  2. Motor Control: The low on-resistance and high input capacitance make the IRFP4868PBF an excellent choice for motor control applications, where precise control of motor speed and torque is required.
  3. Industrial Automation: The robust gate drive and high input capacitance enable reliable operation in industrial automation systems, where high voltage and current loads are common.
  4. Renewable Energy Systems: The IRFP4868PBF can be used in renewable energy systems, such as solar inverters and wind power converters, where high efficiency and reliability are essential.

Conclusion of IRFP4868PBF

The IRFP4868PBF from Infineon Technologies is a high-performance N-Channel MOSFET designed for demanding power electronics applications. Its combination of high voltage and current handling capabilities, low on-resistance, and robust gate drive make it an ideal choice for switching power supplies, motor control, industrial automation, and renewable energy systems. With its compliance with industry standards and high input capacitance, the IRFP4868PBF offers a reliable and efficient solution for a wide range of applications.

FAQ

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The standard lead time for IRFP4868PBF is 12 weeks.
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