Integrated Device Technology (IDT)_71024S12YG
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Integrated Device Technology (IDT)
71024S12YG

774-71024S12YG
PDF Datasheet
71024 - STATIC RAM 1 MEG (64K X

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Tech Specifications

Operating Temperature
0°C ~ 70°C (TA)
Memory Interface
Parallel
ECCN
3A991B2A
Memory Organization
128K x 8
Mounting Type
Surface Mount
Memory Type
Volatile
Product Status
Active
Supplier Device Package
32-SOJ
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71024S12YG Description

71024S12YG Description

The 71024S12YG is a high-performance Static Random Access Memory (SRAM) IC chip manufactured by Integrated Device Technology (IDT). This memory chip is designed for a wide range of applications that require fast access times and reliable data storage. The 71024S12YG features a parallel memory interface and offers a memory organization of 128K x 8, providing a total memory size of 1 Mbit. It operates within a voltage range of 4.5V to 5.5V and is suitable for surface mount applications, making it ideal for compact and high-density electronic designs.

71024S12YG Features

  • Memory Type: Volatile SRAM, ensuring fast read and write operations with low latency.
  • Access Time: 12 ns, providing rapid data retrieval and storage capabilities.
  • Write Cycle Time: 12 ns for both word and page writes, ensuring consistent performance.
  • Memory Organization: 128K x 8, offering a balanced trade-off between address lines and data width.
  • Operating Temperature: 0°C to 70°C (TA), suitable for a variety of industrial and consumer applications.
  • Voltage - Supply: 4.5V to 5.5V, providing flexibility in power supply requirements.
  • Mounting Type: Surface Mount, ideal for compact and space-constrained designs.
  • Package: Bulk, offering cost-effective and efficient packaging for large-scale production.
  • ECCN: 3A991B2A, ensuring compliance with export regulations.
  • HTSUS: 8542.32.0041, facilitating accurate tariff classification for international trade.

71024S12YG Applications

The 71024S12YG is well-suited for applications that demand high-speed data access and reliable memory performance. Its 12 ns access time and 12 ns write cycle time make it ideal for real-time systems where quick data retrieval and storage are critical. The 128K x 8 memory organization provides a substantial amount of memory without requiring an excessive number of address lines, making it suitable for applications with moderate memory requirements.

Some specific use cases where the 71024S12YG excels include:

  • Industrial Control Systems: Providing fast and reliable memory for real-time data processing and control.
  • Telecommunications Equipment: Ensuring rapid data access for communication protocols and signal processing.
  • Consumer Electronics: Enhancing the performance of devices that require quick data retrieval, such as gaming consoles and multimedia devices.
  • Automotive Electronics: Supporting the high-speed memory needs of advanced driver assistance systems (ADAS) and infotainment systems.

Conclusion of 71024S12YG

The 71024S12YG from Integrated Device Technology (IDT) stands out as a reliable and high-performance SRAM solution for a variety of applications. Its 12 ns access time and write cycle time ensure rapid data processing, making it ideal for real-time systems. The 128K x 8 memory organization provides a balanced approach to address and data lines, offering substantial memory capacity without excessive complexity. The surface mount packaging and bulk packaging options make it suitable for both compact designs and large-scale production.

Overall, the 71024S12YG offers a robust and versatile memory solution that meets the demanding requirements of modern electronic systems. Its compliance with industry standards and regulations further enhances its appeal for global applications.

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