International Rectifier_AUIRFZ34N
original

International Rectifier
AUIRFZ34N

278-AUIRFZ34N
PDF Datasheet
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3

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Tech Specifications

Package/Case
TO-220AB
Continuous Drain Current (ID)
29A
Drain to Source Voltage (Vdss)
55V
Gate to Source Voltage (Vgs)
20V
Height
16.13mm
Input Capacitance
700pF
Length
10.75mm
Max Operating Temperature
175°C
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AUIRFZ34N Description

N-Channel 55 V 29A (Tc) 68W (Tc) Through Hole TO-220AB

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