International Rectifier
IRF6713STRPBF
278-IRF6713STRPBF
PDF Datasheet
Power Field-Effect Transistor, 22A I(D), 25V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
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Tech Specifications
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
25V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.88nF
Max Operating Temperature
150°C
IRF6713STRPBF Description
N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc) Surface Mount DirectFET™ Isometric SQ
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