24LCS52-I/SN Description
The 24LCS52-I/SN from Microchip Technology is a 2Kbit (256 x 8) serial EEPROM with an I2C interface, designed for high-performance, low-power applications. Operating within a 2.2V to 5.5V supply range, it supports a 400 kHz clock frequency, making it suitable for systems requiring fast data access with minimal power consumption. The device features a 900 ns access time and a 5ms write cycle time (word/page), ensuring efficient read/write operations. Packaged in an 8-SOIC tube, it is RoHS3 compliant and REACH unaffected, meeting stringent environmental standards.
24LCS52-I/SN Features
- Memory Size & Organization: 2Kbit (256 x 8) EEPROM for flexible data storage.
- I2C Interface: Enables seamless integration with microcontrollers and other I2C-compatible devices.
- Wide Voltage Range (2.2V–5.5V): Supports operation in low-power and mixed-voltage systems.
- High-Speed Performance: 400 kHz clock frequency and 900 ns access time for rapid data transactions.
- Reliable Write Endurance: 5ms write cycle time ensures robust performance in frequent write applications.
- Surface-Mount Packaging (8-SOIC): Compact form factor ideal for space-constrained designs.
- Environmental Compliance: RoHS3 and REACH unaffected, with MSL 1 (unlimited) moisture sensitivity.
24LCS52-I/SN Applications
- Consumer Electronics: Configuration storage in smart devices, TVs, and wearables.
- Industrial Systems: Parameter storage for sensors, PLCs, and automation controllers.
- Automotive: Non-volatile memory for infotainment and telematics systems (within non-critical applications).
- IoT Devices: Low-power data logging and firmware storage in connected sensors.
- Medical Equipment: Calibration data storage in portable diagnostic tools.
Conclusion of 24LCS52-I/SN
The 24LCS52-I/SN stands out for its low-voltage operation, high-speed I2C interface, and compact packaging, making it a versatile choice for modern embedded systems. Its balance of performance, reliability, and compliance makes it ideal for applications demanding efficient non-volatile memory with minimal footprint. Engineers will appreciate its ease of integration and robust write endurance, particularly in power-sensitive and space-constrained designs.