Microchip Technology Tariff Inquiry

AT40K10-2BQI

The AT40K10-2BQI is a high-performance, 2-Wire Interface EEPROM memory device from Microchip Technology. This device offers a storage capacity of 10K bits organized as 1,280 x 8 or 2,048 x 8, with a page write capability of up to 32 bytes. It operates with a wide supply voltage range of 2.7V to 5.5V, making it suitable for various applications.

Description:

The AT40K10-2BQI is a serial EEPROM memory device that uses a simple 2-Wire Interface for communication. It is available in a compact 8-lead SOIC package, making it ideal for space-constrained applications.

Features:

1. Storage Capacity: 10K bits organized as 1,280 x 8 or 2,048 x 8.
2. Page Write Capability: Up to 32 bytes.
3. 2-Wire Interface: Simplifies the connection and communication with the microcontroller.
4. Wide Supply Voltage Range: 2.7V to 5.5V.
5. Operating Temperature Range: -40°C to +85°C (industrial) and -40°C to +125°C (extended).
6. Write Protection: Provides software and hardware protection options.
7. Fast Read Capability: Supports fast read speeds for efficient data access.
8. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered applications.

Applications:

The AT40K10-2BQI EEPROM memory device is suitable for a wide range of applications, including:

1. Industrial control systems: Storing configuration data, calibration data, and system settings.
2. Consumer electronics: Storing user preferences, device settings, and firmware updates.
3. Automotive systems: Storing vehicle configuration, calibration data, and system settings.
4. Telecommunication systems: Storing network settings, user data, and system configurations.
5. Medical devices: Storing device settings, calibration data, and user preferences.
6. IoT devices: Storing device configurations, sensor data, and user settings.
7. Embedded systems: Storing boot-up data, system settings, and user configurations.

The AT40K10-2BQI is a versatile EEPROM memory device that offers a combination of high performance, ease of use, and reliability, making it an excellent choice for various applications requiring non-volatile memory storage.