The DN3525N8-G is a high-performance MOSFET (Metal Oxide) from Microchip Technology, designed for a wide range of applications in the electronics industry. This N-Channel, Depletion Mode MOSFET offers superior performance with its 250V Drain to Source Voltage (Vdss) and 360mA Continuous Drain Current (Id) at 25°C. With a maximum power dissipation of 1.6W and an ultra-low input capacitance of 350pF, the DN3525N8-G ensures efficient operation and fast switching speeds.
The DN3525N8-G's unique combination of high voltage, low power dissipation, and fast switching capabilities make it ideal for various applications, including:
The DN3525N8-G from Microchip Technology is a versatile and high-performance MOSFET that offers excellent technical specifications and performance benefits. Its unique features, such as high Vdss, low Rds On, and fast switching speeds, make it an ideal choice for a wide range of applications in power electronics, automotive, and industrial control systems. With its compliance to REACH and RoHS standards, the DN3525N8-G is not only a powerful component but also an environmentally responsible choice for your next electronics project.
Download datasheets and manufacturer documentation for DN3525N8-G