Microchip Technology_DN3525N8-G

Microchip Technology
DN3525N8-G  
Single FETs, MOSFETs

DN3525N8-G
278-DN3525N8-G
Ersa
Microchip Technology-DN3525N8-G-datasheets-1794161.pdf
MOSFET N-CH 250V 360MA TO243AA
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    DN3525N8-G Description

    DN3525N8-G Description

    The DN3525N8-G is a high-performance MOSFET (Metal Oxide) from Microchip Technology, designed for a wide range of applications in the electronics industry. This N-Channel, Depletion Mode MOSFET offers superior performance with its 250V Drain to Source Voltage (Vdss) and 360mA Continuous Drain Current (Id) at 25°C. With a maximum power dissipation of 1.6W and an ultra-low input capacitance of 350pF, the DN3525N8-G ensures efficient operation and fast switching speeds.

    DN3525N8-G Features

    • Technology: MOSFET (Metal Oxide)
    • Drain to Source Voltage (Vdss): 250V
    • Continuous Drain Current (Id): 360mA at 25°C
    • Power Dissipation (Max): 1.6W
    • Input Capacitance (Ciss): 350pF @ 25V
    • Gate-Source Voltage (Vgs): ±20V
    • Rds On (Max): 6Ohm @ 200mA, 0V
    • Mounting Type: Surface Mount
    • Package: Tape & Reel (TR)
    • REACH Status: REACH Unaffected
    • RoHS Status: ROHS3 Compliant
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
    • ECCN: EAR99
    • HTSUS: 8541.29.0095

    DN3525N8-G Applications

    The DN3525N8-G's unique combination of high voltage, low power dissipation, and fast switching capabilities make it ideal for various applications, including:

    1. Power Electronics: Due to its high Vdss and low Rds On, the DN3525N8-G is suitable for power switching applications in power supplies and motor control systems.
    2. Automotive: The MOSFET's ability to handle high voltages and its robust design make it a perfect fit for automotive electronics, such as electric vehicle chargers and battery management systems.
    3. Industrial Control: In industrial settings, the DN3525N8-G can be used in motor drives, robotics, and process control systems where high voltage and reliable operation are crucial.

    Conclusion of DN3525N8-G

    The DN3525N8-G from Microchip Technology is a versatile and high-performance MOSFET that offers excellent technical specifications and performance benefits. Its unique features, such as high Vdss, low Rds On, and fast switching speeds, make it an ideal choice for a wide range of applications in power electronics, automotive, and industrial control systems. With its compliance to REACH and RoHS standards, the DN3525N8-G is not only a powerful component but also an environmentally responsible choice for your next electronics project.

    Tech Specifications

    Configuration
    Typical Turn-Off Delay Time (ns)
    Maximum Gate Source Leakage Current (nA)
    Input Capacitance (Ciss) (Max) @ Vds
    Typical Rise Time (ns)
    PPAP
    Channel Mode
    Typical Turn-On Delay Time (ns)
    Product Status
    Automotive
    Drain to Source Voltage (Vdss)
    Supplier Package
    Maximum IDSS (uA)
    Package / Case
    Technology
    REACH Status
    Channel Type
    EU RoHS
    Maximum Continuous Drain Current (A)
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Pulsed Drain Current @ TC=25°C (A)
    Maximum Drain Source Voltage (V)
    Maximum Drain Source Resistance (mOhm)
    ECCN
    Mounting Type
    Rds On (Max) @ Id, Vgs
    Standard Package Name
    Vgs(th) (Max) @ Id
    Pin Count
    Mounting
    Typical Reverse Transfer Capacitance @ Vds (pF)
    Lead Shape
    Current - Continuous Drain (Id) @ 25°C
    Drive Voltage (Max Rds On, Min Rds On)
    HTSUS
    Package
    Typical Input Capacitance @ Vds (pF)
    Maximum Power Dissipation on PCB @ TC=25°C (W)
    Category
    PCB changed
    HTS
    FET Type
    Number of Elements per Chip
    Typical Reverse Recovery Time (ns)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Power Dissipation (Max)
    Typical Fall Time (ns)
    Process Technology
    Package Height
    Maximum Positive Gate Source Voltage (V)
    Mfr
    Vgs (Max)
    RoHS Status
    FET Feature
    Maximum Gate Source Voltage (V)
    Typical Gate Plateau Voltage (V)
    Material
    Package Length
    Maximum Diode Forward Voltage (V)
    Series
    Typical Output Capacitance (pF)
    Tab
    Part Status
    Package Width
    Base Product Number
    Unit Weight
    Id - Continuous Drain Current
    Product
    Fall Time
    RoHS
    Qg - Gate Charge
    Transistor Type
    Number of Channels
    Height
    Maximum Operating Temperature
    Width
    Rds On - Drain-Source Resistance
    Mounting Style
    Vgs - Gate-Source Voltage
    Transistor Polarity
    Minimum Operating Temperature
    Vds - Drain-Source Breakdown Voltage
    Type
    Rise Time
    Length
    Vgs th - Gate-Source Threshold Voltage
    Pd - Power Dissipation
    USHTS

    DN3525N8-G Documents

    Download datasheets and manufacturer documentation for DN3525N8-G

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