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DN2625K4-G

DN2625K4-G Description

The DN2625K4-G is a high-performance N-Channel MOSFET from Microchip Technology, designed for applications requiring robust performance and reliability. With a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 1.1A at 25°C, this device is well-suited for a variety of power electronics applications.

DN2625K4-G Features

• Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the DN2625K4-G offers superior performance and reliability.
• Depletion Mode FET Feature: This unique feature allows for efficient operation in both on and off states, providing excellent control over power dissipation.
• Low Rds On: With a maximum Rds On of 3.5 Ohms at 1A and 0V, the DN2625K4-G minimizes power loss and improves efficiency.
• Robust Input Capacitance: A maximum input capacitance (Ciss) of 1000 pF at 25V ensures stable operation under varying input conditions.
• Gate Charge (Qg): A maximum gate charge (Qg) of 7.04 nC at 1.5V contributes to faster switching speeds and reduced power consumption.
• Compliance: The DN2625K4-G is REACH Unaffected, ROHS3 Compliant, and EAR99 classified, ensuring compliance with international standards and regulations.

DN2625K4-G Applications

The DN2625K4-G is ideal for a range of applications where high voltage and current handling are required, including:

• Power Supplies: Its high Vdss and Id ratings make it suitable for use in power supply designs, particularly in applications where high efficiency and low power loss are critical.
• Motor Controls: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as in industrial automation and robotics.
• Automotive Electronics: The DN2625K4-G's robust performance and compliance with automotive standards make it suitable for use in automotive electronics, such as in-vehicle power management systems.

Conclusion of DN2625K4-G

The DN2625K4-G from Microchip Technology is a versatile and reliable N-Channel MOSFET, offering a combination of high voltage and current ratings, low Rds On, and unique depletion mode operation. Its compliance with international standards and its suitability for a wide range of applications make it an excellent choice for designers looking to improve the performance and reliability of their power electronics systems.