Microchip Technology_DN2625K4-G

Microchip Technology
DN2625K4-G  
Single FETs, MOSFETs

DN2625K4-G
278-DN2625K4-G
Ersa
Microchip Technology-DN2625K4-G-datasheets-1943017.pdf
MOSFET N-CH 250V 1.1A TO252
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DN2625K4-G Description

DN2625K4-G Description

The DN2625K4-G is a high-performance N-Channel MOSFET from Microchip Technology, designed for applications requiring robust performance and reliability. With a drain-to-source voltage (Vdss) of 250V and a continuous drain current (Id) of 1.1A at 25°C, this device is well-suited for a variety of power electronics applications.

DN2625K4-G Features

  • Technology: Utilizing advanced MOSFET (Metal Oxide) technology, the DN2625K4-G offers superior performance and reliability.
  • Depletion Mode FET Feature: This unique feature allows for efficient operation in both on and off states, providing excellent control over power dissipation.
  • Low Rds On: With a maximum Rds On of 3.5 Ohms at 1A and 0V, the DN2625K4-G minimizes power loss and improves efficiency.
  • Robust Input Capacitance: A maximum input capacitance (Ciss) of 1000 pF at 25V ensures stable operation under varying input conditions.
  • Gate Charge (Qg): A maximum gate charge (Qg) of 7.04 nC at 1.5V contributes to faster switching speeds and reduced power consumption.
  • Compliance: The DN2625K4-G is REACH Unaffected, ROHS3 Compliant, and EAR99 classified, ensuring compliance with international standards and regulations.

DN2625K4-G Applications

The DN2625K4-G is ideal for a range of applications where high voltage and current handling are required, including:

  • Power Supplies: Its high Vdss and Id ratings make it suitable for use in power supply designs, particularly in applications where high efficiency and low power loss are critical.
  • Motor Controls: The device's ability to handle high currents and voltages makes it an excellent choice for motor control applications, such as in industrial automation and robotics.
  • Automotive Electronics: The DN2625K4-G's robust performance and compliance with automotive standards make it suitable for use in automotive electronics, such as in-vehicle power management systems.

Conclusion of DN2625K4-G

The DN2625K4-G from Microchip Technology is a versatile and reliable N-Channel MOSFET, offering a combination of high voltage and current ratings, low Rds On, and unique depletion mode operation. Its compliance with international standards and its suitability for a wide range of applications make it an excellent choice for designers looking to improve the performance and reliability of their power electronics systems.

Tech Specifications

Configuration
Typical Turn-Off Delay Time (ns)
Maximum Gate Source Leakage Current (nA)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Typical Rise Time (ns)
PPAP
Channel Mode
Typical Turn-On Delay Time (ns)
Product Status
Automotive
Drain to Source Voltage (Vdss)
Supplier Package
Maximum IDSS (uA)
Package / Case
Technology
REACH Status
Channel Type
EU RoHS
Maximum Continuous Drain Current (A)
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Drain Source Voltage (V)
Maximum Drain Source Resistance (mOhm)
ECCN
Mounting Type
Rds On (Max) @ Id, Vgs
Standard Package Name
Vgs(th) (Max) @ Id
Pin Count
Mounting
Lead Shape
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
HTSUS
Package
Typical Gate Charge @ Vgs (nC)
Typical Input Capacitance @ Vds (pF)
PCB changed
HTS
FET Type
Number of Elements per Chip
ECCN (US)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Power Dissipation (Max)
Typical Fall Time (ns)
Process Technology
Package Height
Mfr
Vgs (Max)
RoHS Status
FET Feature
Maximum Gate Source Voltage (V)
Material
Package Length
Series
Tab
Part Status
Package Width
Base Product Number
Unit Weight
Id - Continuous Drain Current
Product
Fall Time
RoHS
Qg - Gate Charge
Transistor Type
Number of Channels
Typical Turn-On Delay Time
Height
Maximum Operating Temperature
Width
Rds On - Drain-Source Resistance
Mounting Style
Vgs - Gate-Source Voltage
Typical Turn-Off Delay Time
Transistor Polarity
Minimum Operating Temperature
Vds - Drain-Source Breakdown Voltage
Rise Time
Moisture Sensitive
Length
Forward Transconductance - Min
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
USHTS

DN2625K4-G Documents

Download datasheets and manufacturer documentation for DN2625K4-G

Ersa Fab Site Revision 07/Apr/2015      
Ersa DN2625      
Ersa MBB/Label Chgs 16/Nov/2018       Label and Packing Changes 23/Sep/2015      
Ersa DN2625      
Ersa DN2625 29/May/2017       DN2625 06/Dec/2016      
Ersa Microchip CA Prop65       Microchip RoHS       Microchip REACH      

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